Abstract:Porous GaN nanopyramids, produced through a combination of selective area growth and electrochemical etching, introduce an exciting new alternative to traditional nanostructures. The precisely controlled porosity within these nanostructure templates offers a substantial advancement for nanoscale light emitting devices, enhancing their performance through superior light extraction, effective defect filtration, and optimal strain relaxation. GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices. However, significant progress remains elusive, possibly due to the absence of innovative approaches. Beyond the smaller size of GaN nanostructures, the main interest lies in growing InGaN active layers on semi‐ and non‐polar orientations. Nevertheless, it is evident that while leveraging such a method holds initial promise, this approach may eventually reach its limits, prompting the need for fresh perspectives. In this manuscript, electrochemical etching is utilized to fabricate porous GaN nanopyramids. Given the absence of prior studies on electrochemical etching of GaN nanostructures, its etching behavior is investigated, revealing its selectivity concerning doping concentration and geometry. Furthermore, how the choice of electrolyte can differently impact the optical response of the etched template is explored. Subsequently, an InGaN/GaN quantum wells shell is grown as the active region. The significance of the approach is evidenced by a tenfold enhancement in photoluminescence emission. Porous nanopyramids demonstrate a higher internal quantum efficiency of 44.7% and faster radiative recombination time. Additionally, finite difference time domain simulation reveals a twofold increase in light extraction efficiency. This research will lead the way toward the development of a new class of nanostructures offering potential advancements in optoelectronic devices.

Honeycomb-like Gallium Nitride Prepared Via Dual-Ion Synergistic Etching Mechanism Using Amino Acid As Etchant

Foam-like GaN: Study on the controlled tuning of pore size by R group change in amino acid etchant and its ultra-high photocurrent response

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Light-assisted wet etching of semiconductor nitride GaN

A novel mild etchant for photoelectrochemical etching of GaN with enhanced photoresponse

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Enhancing the photocatalytic activity of GaN by electrochemical etching

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

Porous GaN Nanopyramids: Advancing Beyond Conventional Nanostructures for High‐Brightness InGaN/GaN Quantum Wells Emission