Abstract:In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

Photoelectrochemical Etching of Gallium Nitride Surface by Complexation Dissolution Mechanism

Nonaqueous Organic Electrolyte for Photoelectrochemical Etching of Gallium Nitride Surface

Metal-assisted Photochemical Etching of Gallium Nitride Using Electrodeposited Noble Metal Nanoparticles As Catalysts

A novel mild etchant for photoelectrochemical etching of GaN with enhanced photoresponse

Honeycomb-like Gallium Nitride Prepared Via Dual-Ion Synergistic Etching Mechanism Using Amino Acid As Etchant

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property

Enhancing the photocatalytic activity of GaN by electrochemical etching

Electrochemical etching of highly conductive GaN single crystals

Porous GaN Photoelectrode Fabricated by Photo-Assisted Electrochemical Etching Using Ionic Liquid As Etchant

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Light-assisted wet etching of semiconductor nitride GaN

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Enhancement Mechanism of Chemical Mechanical Polishing for GaN Based on Electro-Fenton Reaction

Photoelectrochemical (PEC) etching of Ga2O3

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

Metal-assisted Photochemical Etching of GaN Nanowires: the Role of Metal Distribution

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Fabrication of Gallium Nitride Nanowires by Metal-Assisted Photochemical Etching