Abstract:Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require dopant addition, or a restricted choice of nanowire diameter, and only rarely yield a pure phase. Here we demonstrate that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio. Phase purity is achieved without sacrificing important specifications of diameter and dopant levels. Pure zinc blende nanowires, free of twin defects, were achieved using a low growth temperature coupled with a high Will ratio, Conversely, a high growth temperature coupled with a low Will ratio produced pure wurtzite nanowires free of stacking faults. We present a comprehensive nucleation model to explain the formation of these markedly different crystal phases under these growth conditions. Critical to achieving phase purity are changes in Surface energy of the nanowire side facets, which in turn are controlled by the basic growth parameters of temperature and V/III ratio. This ability to tune crystal structure between twin-free zinc blende and stacking-fault-free,wurtzite not only will enhance the performance of nanowire devices but also opens new possibilities for engineering nanowire devices, without restrictions on nanowire diameters or doping.

Growth of Pure Wurtzite InAs Nanowires over a Wide Diameter Range

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Self-catalyzed Growth of InAs Nanowires on InP Substrate

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Large-composition-range pure-phase homogeneous InAs$_{1-x}$Sb$_x$ nanowires

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Nanowires for Optoelectronic Device Applications

Morphology and Microstructure of Inas Nanowires on Gaas Substrates Grown by Molecular Beam Epitaxy

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Synthesis of InAs nanowires via a low-temperature solvothermal route.

Self-catalyzed Growth of Pure Zinc Blende ⟨110⟩ InP Nanowires

Growth of Defect-Free InAs Nanowires Using Pd Catalyst

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature

Growth and Characterization of Inas Quantum Dots on Inp Nanowires with Zinc Blende Structure

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.