Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

Nanowires for Optoelectronic Device Applications

Epitaxy of Iii-V Semiconductor Nanowires Towards Optoelectronic Devices

Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Optical properties of single InP and GaAs nanowire heterostructures

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

III-V Compound Semiconductor Nanowires for Optoelectronic Applications

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy