Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Synthesis and Characterizations of InGaAs Nanowire Parallel Arrays for High Performance Electronic Devices

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

High-Performance Indium Phosphide Nanowires Synthesized on Amorphous Substrates: from Formation Mechanism to Optical and Electrical Transport Measurements

Nanowires for Optoelectronic Device Applications

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Ternary Self-Catalyzed GaAsP Nanowire Grown by Molecular Beam Epitaxy

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

Crystalline GaSb Nanowires Synthesized on Amorphous Substrates: from the Formation Mechanism to P-Channel Transistor Applications

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

III-V Compound Semiconductor Nanowires for Optoelectronic Applications

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Growth of Straight InAs-on-GaAs Nanowire Heterostructures