Synthesis and Characterizations of InGaAs Nanowire Parallel Arrays for High Performance Electronic Devices

jared hou,ning han,fengyun wang,senpo yip,fei xiu,takfu hung,johnny c ho

DOI: https://doi.org/10.1149/ma2012-02/33/2702

2012-01-01

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Jared J. Hou,Ning Han,Fengyun Wang,SenPo Yip,Fei Xiu,TakFu Hung,Johnny C. Ho

DOI: https://doi.org/10.1149/05006.0179ecst

2012-01-01

Abstract:As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (~1E6) and electron mobility (~1300 cm2/Vs), which could be utilized in future integrated circuits.
Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Jared J Hou,Ning Han,Fengyun Wang,Fei Xiu,Senpo Yip,Alvin T Hui,TakFu Hung,Johnny C Ho

DOI: https://doi.org/10.1021/nn300966j

IF: 17.1

2012-01-01

ACS Nano

Abstract:InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.
Nanowires for Optoelectronic Device Applications

Q. Gao,H. J. Joyce,S. Paiman,J. H. Kang,H. H. Tan,Y. Kim,L. M. Smith,H. E. Jackson,J. M. Yarrison-Rice,X. Zhang,J. Zou,C. Jagadish

DOI: https://doi.org/10.1002/pssc.200982528

2009-01-01

Abstract:GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
High-Performance Indium Phosphide Nanowires Synthesized on Amorphous Substrates: from Formation Mechanism to Optical and Electrical Transport Measurements

Alvin T. Hui,Fengyun Wang,Ning Han,SenPo Yip,Fei Xiu,Jared J. Hou,Yu-Ting Yen,TakFu Hung,Yu-Lun Chueh,Johnny C. Ho

DOI: https://doi.org/10.1039/c2jm31232h

2012-01-01

Journal of Materials Chemistry

Abstract:InP NWs have been extensively explored for next-generation electronic and optoelectronic devices due to their excellent carrier mobility, exciton lifetime and wave-guiding characteristics. Typically, those NWs are grown epitaxially on crystalline substrates which could limit their potential applications requiring high growth yield to be printable or transferable on amorphous and flexible substrates. Here, utilizing Au as catalytic seeds, we successfully demonstrate the synthesis of crystalline, stoichiometric and dense InP NWs on amorphous substrates. Notably, the NWs are found to grow via the vapor-liquid-solid (VLS) mechanism with a narrow distribution of diameter (34.6 +/- 7.7 nm) uniformly along the entire NW length (>10 mu m). Although the grown NWs possess a substantial amount of twin defects, the fabricated NW FETs still exhibit impressive electrical performance with high carrier mobility (similar to 350 cm(2) V-1 s(-1)) and I-ON/I-OFF ratio (similar to 10(6)). All these have demonstrated the promising potency of such NWs grown on amorphous substrates for technological applications, as compared to the conventional MBE or MOCVD grown InP NWs.
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.

Jared J Hou,Fengyun Wang,Ning Han,Fei Xiu,SenPo Yip,Ming Fang,Hao Lin,Tak F Hung,Johnny C Ho

DOI: https://doi.org/10.1021/nn304174g

IF: 17.1

2012-01-01

ACS Nano

Abstract:Ternary InGaAs nanowires have recently attracted extensive attention due to their superior electron mobility as well as the ability to tune the band gap for technological applications ranging from high-performance electronics to high-efficiency photovoltaics. However, due to the difficulties in synthesis, there are still considerable challenges to assess the correlation among electrical, optical, and structural properties of this material system across the entire range of compositions. Here, utilizing a simple two-step growth method, we demonstrate the successful synthesis of composition and band gap tunable In(x)Ga(1-x)As alloy nanowires (average diameter = 25-30 nm) by manipulating the source powder mixture ratio and growth parameters. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy and X-ray diffraction. Importantly, the as-grown NWs exhibit well-controlled surface morphology and low defect concentration without any phase segregation in all stoichiometric compositions. Moreover, it is found that the electrical nanowire device performances such as the turn-off and I(ON)/I(OFF) ratios are improved when the In concentration decreases at a cost of mobility degradation. More generally, this work suggests that a careful stoichiometric design is required for achieving optimal nanowire device performances.
Optical properties of single InP and GaAs nanowire heterostructures

howard e jackson,samanthi a perera,m a fickenscher,l m smith,jan m yarrisonrice,hannah j joyce,q gao,h h tan,c jagadish,xing zhang,jing zou

DOI: https://doi.org/10.1109/LEOS.2008.4688673

2008-01-01

Abstract:Semiconductor nanowire (NW) heterostructures are increasingly important building blocks for electronic and optoelectronic devices. III-V nanowires with attention to well-controlled growth parameters, high structural quality and high optical quality NWs with unusually long recombination lifetimes can be achieved. We probe these NWs experimentally with both CW and time-resolved photoluminescence spectroscopy. The large surface-to-volume ratio is an intrinsic characteristic of nanowires which highlights the critical importance of surface and interface quality.
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Alexandra C. Ford,Johnny C. Ho,Zhiyong Fan,Onur Ergen,Virginia Altoe,Shaul Aloni,Haleh Razavi,Ali Javey

DOI: https://doi.org/10.48550/arXiv.0807.0946

2008-07-07

Abstract:InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of high yield of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO2 substrates. The nanowires show superb electrical properties with field-effect electron mobility ~2,700 cm2/Vs and ION/IOFF >103. The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance, printable transistors, capable of delivering 5-10 mA ON currents (~400 nanowires).

Materials Science
Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Tang Tao,Han Song,Jin Wu,Liu Xiaolei,Li Chao,Zhang Daihua,Zhou Chongwu,Chen Bin,Han Jie,Meyyapan M.

DOI: https://doi.org/10.1557/jmr.2004.19.2.423

2004-01-01

Abstract:InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 μm/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.
Synthesis and Electronic Properties of Single-Crystalline Indium Nitride Nanowires

Tang Tao,Han Song,Jin Wu,Liu Xiaolei,Li Chao,Zhang Daihua,Zhou Chongwu

DOI: https://doi.org/10.1557/proc-776-q12.1

2003-01-01

Abstract:InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was employed to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality products and growth rates as high as 4–10 μm/hour. The as-grown nanowires showed highly single-crystalline structures and precisely controlled diameters by using monodispersed gold clusters as the catalyst. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.
High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

Hyowon W. Jeong,Stephen A. Church,Markus Döblinger,Akhil Ajay,Benjamin Haubmann,Nikesh Patel,Jonathan J. Finley,Patrick W. Parkinson,Gregor Koblmüller

DOI: https://doi.org/10.1021/acs.nanolett.4c04852

IF: 10.8

2024-11-05

Nano Letters

Abstract:Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays that host active quantum heterostructures is of paramount interest for on-chip integrated photonic and quantum photonic devices. However, this has remained challenging due to the vast geometrical parameter space and variations at the single object level. Here, we demonstrate high-throughput spectroscopy on 16800 individual InGaAs quantum heterostructures grown by site-selective epitaxy on silicon, with...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

hannah j joyce,qiang gao,yong kim,h h tan,c jagadish

DOI: https://doi.org/10.1109/LEOS.2007.4382451

2007-01-01

Abstract:This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Hannah J. Joyce,Qiang Gao,Jennifer Wong-Leung,Yong Kim,H. Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1109/jstqe.2010.2077621

IF: 4.9

2011-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties.
Synthesis and Characterization of High Quality InN Nanowires and Nano-networks

Cai Zhihua,Garzon Samir,Richard A. Webb,Koley Goutam

DOI: https://doi.org/10.1557/proc-1058-jj06-13

2007-01-01

Abstract:High quality InN nanowires have been synthesized in a horizontal quartz-tube furnace through direct reaction between metallic Indium and Ammonia using Nitrogen as the carrier gas. Thin film of Au on SiO 2 /Si substrate has been used as the catalyst layer, facilitating vapor-liquid-solid growth of the nanostructures. The nanowires were grown at a very fast rate of up to 30 μm/hr. Smooth and horizontal nanowire growth was achieved only with nanoscale catalyst patterns, while large area catalyst coverage resulted in uncontrolled and three-dimensional growth. The InN nanowires, which were usually covered with a thin shell layer of In2O3, grew along [110] direction, with overall diameters 20 - 60 nm and lengths 5 - 15 μm. The synthesized nanowires bent spontaneously or got deflected from other nanowires at multiples of 30 degrees forming nano-networks. The catalyst particles for the NWs were found mostly at the sides of the NW apex which helped them to bend spontaneously or get deflected from other NWs at angles which were multiples of 30 degrees. The NW based FETs with a back-gated configuration have already been investigated. The gate-bias dependent mobility of the NWs ranged from 55 cm 2 /Vs to 220 cm 2 /Vs, and their carrier concentration was ∼10 18 cm −3 .
High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Hannah J. Joyce,Qiang Gao,H. Hoe Tan,Chennupati Jagadish,Yong Kim,Melodie A. Fickenscher,Saranga Perera,Thang Ba Hoang,Leigh M. Smith,Howard E. Jackson,Jan M. Yarrison-Rice,Xin Zhang,Jin Zou

DOI: https://doi.org/10.1002/adfm.200800625

IF: 19

2008-01-01

Advanced Functional Materials

Abstract:We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group I I I precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires.
Highly Ordered GaN-based Nanowire Arrays Grown on Patterned (100) Silicon and Their Optical Properties.

Xingfu Wang,Jinhui Tong,Xin Chen,Bijun Zhao,Zhiwei Ren,Danwei Li,Xiangjing Zhuo,Jun Zhang,Hanxiang Yi,Chao Liu,Fang,Shuti Li

DOI: https://doi.org/10.1039/c3cc47239f

IF: 4.9

2013-01-01

Chemical Communications

Abstract:Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.
Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Q. Gao,Y. Kim,H. J. Joyce,P. Lever,S. Mokkapati,M. Buda,H. H. Tan,C. Jagadish

DOI: https://doi.org/10.1109/icton.2006.248327

2006-01-01

Abstract:InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper
GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Ning Han,Jared J Hou,Fengyun Wang,SenPo Yip,Yu-Ting Yen,Zai-Xing Yang,Guofa Dong,TakFu Hung,Yu-Lun Chueh,Johnny C Ho

DOI: https://doi.org/10.1021/nn403767j

IF: 17.1

2013-01-01

ACS Nano

Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.
Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires

Xueyan Wu,Jaideep S. Kulkarni,Gillian Collins,Nikolay Petkov,Dorothée Almécija,John J. Boland,Donāts Erts,Justin D. Holmes

DOI: https://doi.org/10.1021/cm801104s

IF: 10.508

2008-01-01

Chemistry of Materials

Abstract:The development of semiconductor nanowires has recently been the focus of extensive research as these structures may play an important role in the next generation of nanoscale devices.Using semiconductor nanowires as building blocks, a number of high performance electronic devices have been fabricated.In this review, we discuss synthetic methodologies and electrical characteristics of Si, Ge and Ge/Si core/shell nanowires.In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed.Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction and dopant distribution within nanowires to produce nanowire-based electronics on a large scale.
InAs/InP radial nanowire heterostructures as high electron mobility devices.

Xiaocheng Jiang,Qihua Xiong,Sungwoo Nam,Fang Qian,Yat Li,Charles M Lieber

DOI: https://doi.org/10.1021/nl072024a

IF: 10.8

2007-01-01

Nano Letters

Abstract:Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAsAnP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/mu m, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Xiaowan Ge,Jijun Zou,Wenjuan Deng,Xincun Peng,Weilu Wang,Shaotao Jiang,Xiaojun Ding,Zhaoping Chen,Yijun Zhang,Benkang Chang

DOI: https://doi.org/10.1088/2053-1591/2/9/095015

IF: 2.025

2015-01-01

Materials Research Express

Abstract:Gallium arsenide (GaAs) nanowire array (NWA) photocathodes have unique electrical and optical properties. Based on studies about photon absorption, band structure, and electron transport properties of GaAs nanowire, a photoemission model for GaAs NWA photocathodes is established. According to the model, we simulate and analyze the photocurrent, spectral response, and absorption properties of ordered GaAs NWA photocathodes. The results present a very interesting phenomenon; the photocurrent and spectral response peak at incident angles of 20 degrees and 30 degrees, respectively. These special properties of NWA cathodes differentiate them from their thin film counterparts. We also analyze the effects of nanowire length and diameter on the photocurrent of NWA cathodes, and find the optimum height of the nanowires is 10 mu m. This study shows that NWAs exhibit higher absorbance and excellent charge transport. Thus, GaAs NW A photocathodes are excellent candidates for electron sources.

Synthesis and Characterizations of InGaAs Nanowire Parallel Arrays for High Performance Electronic Devices

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Nanowires for Optoelectronic Device Applications

High-Performance Indium Phosphide Nanowires Synthesized on Amorphous Substrates: from Formation Mechanism to Optical and Electrical Transport Measurements

Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.

Optical properties of single InP and GaAs nanowire heterostructures

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Synthesis and Electronic Properties of Single-Crystalline Indium Nitride Nanowires

High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Synthesis and Characterization of High Quality InN Nanowires and Nano-networks

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Highly Ordered GaN-based Nanowire Arrays Grown on Patterned (100) Silicon and Their Optical Properties.

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes