Abstract:Due to its high versatility and cost-effectiveness, solution process has a remarkable advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing flexible resistive random-access memory (RRAM) devices. However, the reported solution-processed binary oxides, the most promising active layer materials for their compatibility with silicon-based semiconductor technology, commonly require high-temperature annealing (>145 °C) and the RRAMs based on them encounter insufficient flexibility. In this work, an amorphous and uniform SiOx active layer was prepared by irradiating an inorganic polymer, perhydropolysilazane, with a vacuum ultraviolet of 172 nm at room temperature. The corresponding RRAM showed typical bipolar resistance switching with a forming-free behavior. The device on polyimide film exhibited outstanding flexibility with a minimum bending radius of 0.5 mm, and no performance degradation was observed after bending 2000 times with a radius of 2.3 mm, which is the best among the reported solution-processed binary oxide-based RRAMs and can even rival the performance of PVD/CVD-based devices. This room-temperature solution process and the afforded highly flexible RRAMs have vast prospects for application in smart wearable electronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16556?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16556</a>.XRD patterns of the Au substrate and VUV-irradiation SiOx films on Au substrate (Figure S1); the SEM image of the SiOx layer on Au/glass substrate (Figure S2); the electroforming-free performance of the prepared device (Figure S3); I–V curves in a semilogarithmic plot of the Ag/SiOx/Au/glass device in vacuum environment (7.4 × 10–3 Pa) (Figure S4); the wide-scan XPS spectra of the SiOx fabricated with different heating temperatures and VUV-irradiation processes (Figure S5); the I–V curve for the 8 nm device after a few cycles and the 50 nm device (Figure S6); the relationship between the coefficient of variation (σ/μ) and size (Figure S7); the I–V curve of the HRS fitting with SCLC, P-F emission, and thermionic emission mechanism; the I–V curves of the HRS fitting with the Schottky emission mechanism at different temperatures from 303 to 343 K (Figure S8); the I–V measurement result during 349 cycles corresponding to <a class="internalNav" href="#fig3">Figure </a><a class="internalNav" href="#fig3">3</a>c drawn in a diagram (Figure S9); the I–V measurement result for Ti/SiOx/Au/glass during 108 cycles (Figure S10); the resistance of HRS and LRS as a function of the bending strain in outward direction (Figure S11); the change of the resistance with bending numbers in outward direction with a radius of 0.5 mm (Figure S12); the nano-indentation test (by Agilent Nano Indenter G200) for the SiOx layer (Figure S13); the device-to-device data corresponding to <a class="internalNav" href="#fig6">Figure </a><a class="internalNav" href="#fig6">6</a>a,c,d, respectively (Figure S14); the pictures of the hand-made hinge structure (Figure S15); and the details of the bending experiments (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16556/suppl_file/am0c16556_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Non-switching to Switching Transferring Mechanism Investigation for Ag/SiOx/p-Si Structure with SiOx Deposited by HWCVD

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Silicon Introduced Effect On Resistive Switching Characteristics Of Wox Thin Films

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Fabrication of silicon highly-rich SiOx(x<0.75) and its novel resistive switching behaviors

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Sub-band Transport Mechanism and Switching Properties for Resistive Switching Nonvolatile Memories with Structure of Silver/aluminum Oxide/p-Type Silicon

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks

Modulation of Optical Switching Characteristics in MoS2/HfO2/p-Si Structures

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

Unipolar Resistive Switch Based on Silicon Monoxide Realized by Cmos Technology

Room-Temperature, Solution-Processed SiO x via Photochemistry Approach for Highly Flexible Resistive Switching Memory

Etching-dependent reproducible memory switching in vertical SiO2 structures

Resistive Switches and Memories from Silicon Oxide.

Resistive Switching Mechanism In Silicon Highly Rich Siox (X < 0.75) Films Based On Silicon Dangling Bonds Percolation Model

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Structural Andoptoelectronicproperties of A-Siox:Ag Films Used for Ag/SiOx/p-SiMemristor

Bipolar Resistive Switching With Self-Rectifying Effects In Al/Zno/Si Structure

The X Dependent Two Kinds of Resistive Switching Behaviors in SiOx Films with Different X Component

Reliable Resistive Switching of Epitaxial Single Crystalline Cubic Y-HfO2 RRAMs with Si As Bottom Electrodes.

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO 2 at room temperature