Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD

Y.J. Jin,Xiaohong Tang,H. F. Liu,C. Ke,Shijie Wang,D. H. Zhang
DOI: https://doi.org/10.1016/j.jallcom.2017.05.313
IF: 6.2
2017-01-01
Journal of Alloys and Compounds
Abstract:We have synthesized InSb nanorods on InSb substrates by using metal-organic chemical vapor deposition (MOCVD). It is found that the crystal orientation of the substrate plays a remarkable role in controlling growth orientation of the InSb nanorods. On a [100]-oriented InSb substrate, the nanorods tend to lie on the substrate along its [1–10]-axis. In comparison, [111]-oriented InSb substrates tend to promote the vertical growth of InSb nanowires and free-standing InSb nanowires are consequently obtained. The evolutions of diameter and length of the nanowires on InSb (111) substrates as a function of growth temperatures, T, and input V/III source ratios, rV/III, provide the optimized growth condition, i.e., T = 400 °C and rV/III = 50. The orientated growth of one-dimensional InSb nanostructures is discussed and analized by employing a vapor-solid-solid (VSS) growth mechanism.
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