Abstract:Crystal structure, electronic properties, and stability of anatase and rutile Nb-doped TiO2 (Nb:TiO2) compounds with different doping concentrations are studied by the combination of GGA and GGA+U methods within the density functional theory based first-principle calculation. And the main research work and contents are listed as follows: The anatase Nb:TiO2 appears as a degenerated semiconductor which behaves as an intrinsic metal. Its metallic property arises from Nb substitution into the Ti site, providing electrons to the conduction band. In contrast, the rutile Nb:TiO2 shows insulating behaviors. Ionization efficiency of Nb in anatase Nb:TiO2 is higher than that in rutile. We expect that anatase Nb:TiO2 is a potential material for transparent conducting oxide (TCO) while rutile Nb:TiO2 is not. The doped systems show different electronic characteristics, such as band structure, Fermi energy, and effective mass of carriers at different doping levels. In higher dopant concentration nNb , the ionization efficiency decreases slightly. Calculated defect-formation energy shows that Ti-rich material growth conditions are not in favor of the introduction of Nb while Nb can be easily doped in Nb:TiO2 under O-rich growth conditions. Nb dopant is difficult to be doped at higher doping level for both anatase and rutile Nb:TiO2.

Growth Behavior and Interface of (in + Nb) Co-Doped Rutile TiO2 Films Prepared on M-Plane Sapphire Substrates

Probing Interface Structure and Cation Segregation in (in, Nb) Co-Doped TiO2 Thin Films

Investigation on the Electrical Properties of Anatase and Rutile Nb-Doped Tio2 by Gga(+U)

Microstructures and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Chemical Vapor Deposition

Structural, Optical and Electrical Properties of R-Tio2:Sn/sno2:(f/nb) Tandem Film by Aerosol-Assisted Chemical Vapor Deposition

Nanoscale Structure of Ti1−xNbyO2 Mixed-Phase Thin Films: Distribution of Crystal Phase and Dopants

Microstructure and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Enhanced Chemical Vapor Deposition（DBD-CVD）

First Principles Calculations of the Electronic Structure and Optical Properties of Pure and (nb, N) Co-Doped Anatase

High Quality (Innb)(0.1)Ti0.9o2 Single Crystal Grown Using Optical Floating Zone Method

Microstructures and Properties of N-Doped TiO_2 Films Grown by Atmospheric Pressure Chemical Vapor Deposition

Growth and characterization of pyrochlore-type (Ca,Ti)<sub>2</sub>(Nb,Ti)<sub>2</sub>O<sub>7</sub> thin films

MOCVD Growth of InN Films on Sapphire Substrates

Controllable Formation of (004)-Orientated Nb:TiO2 for High-Performance Transparent Conductive Oxide Thin Films with Tunable Near-Infrared Transmittance.

Orientation Preferred Structures in BaTiO3 Thin Films on Ni Substrates

NiO Thin Film with an Extremely High Index $$(7 \overline{1 } 4)$$ on R-Plane Sapphire Substrate

InN growth on BaTiO3 (111) substrates: A first-principles study

Atomic Structure Of Defects And Interfaces In Tio2-B And Ca:Tio2-B (Cati5o11) Films Grown On Srtio3

Epitaxial growth of SrTiO3 films with different orientations on TiN buffered Si(001) by pulsed laser deposition

Structural, Optical and Electrical Properties of Sputtered Nb Doped TiO2 Transparent Conductive Films

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Structural and Optoelectrical Properties of Nb-TiO2 Films Fabricated by Low-Energy Magnetron Sputtering and Post-Annealing