Abstract:Abstract We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO 2 -masks on Si (111) with various mask opening sizes (20–150 nm) and pitches (0.25–2 μ m), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content ( x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core–shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core–shell structure.

Anisotropic Growth of Indium Antimonide Nanostructures

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Straight Indium Antimonide Nanowires with Twinning Superlattices Via a Solution Route.

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Ultrasmall Single-Crystal Indium Antimonide Nanowires

Indium Antimonide Nanowires: Synthesis and Properties.

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Synthesis of Mn-Doped Indium Antimonide Nanowires by Multi-Step Depositions and Annealing

Shape-Controllable Synthesis of Indium Oxide Structures: Nanopyramids and Nanorods

Self-Nucleation Growth of Insb Nanowires Based on Indium Droplets under the Assistance of Au Nano-Particles by Mocvd

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD

Hetero-epitaxial Growth and Mechanism of One-Dimensional InSb Nanostructures on GaAs Substrate by MOCVD

Understanding the anisotropic growth of VS grown PbSnTe nanowires

Anisotropic Growth of Cubic PbTe Nanoparticles to Nanosheets: Controlled Synthesis and Growth Mechanisms

Morphology Control of Indium Germanate Nanowires, Nanoribbons, and Hierarchical Nanostructures

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

The High Anisotropy Of The Epitaxial Growth Of The Well-Aligned Sb2se3 Nanoribbons On Mica

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

The Growth and Shape Evolution of Indium Nanoplates Studied by In Situ Liquid Cell TEM