Influence of halogen precursors on the growth of InSb nanostructures
Alexander Kirk Sten,Kevin Roccapriore,Brian Squires,Christopher L Littler,A.J. Syllaios,Usha Philipose
DOI: https://doi.org/10.1088/1361-6641/ad2bac
IF: 2.048
2024-02-22
Semiconductor Science and Technology
Abstract:The present work highlights the role of halogen compounds in modifying
the shape of the InSb nanostructures, while maintaining a high crystalline quality of
the nanostructures. One-dimensional (1D) nanowires (NWs) and two-dimensional (2D)
nanoplatelets (NPLs) were synthesized by ambient pressure chemical vapor deposition.
Our experimental results suggest that at a critical growth temperature of 512◦C, InSb
NWs grow by the traditional Vapor-Liquid-Solid (VLS) growth mechanism when gold
(Au) nanoparticles are used to initiate growth on an InSb film. The resulting nanowires
were found to have a cylindrical or tapered shape, were of high crystalline quality, and
had stoichiometric composition. In the presence of halogen precursors, a change in
morphology was observed and the resulting nanostructures were 2D NPLs and faceted
NWs. Using existing models of crystal growth and concepts of volume, surface and edge
energies, the experimental results are explained on the basis of chlorine atoms adsorbed
on the wide or narrow facets of a nanocrystal, initiating nucleation and facilitating NPL
or faceted NW formation. The incorporation of the chlorine atoms add a new degree
of freedom to CVD synthesis of nanostructures and the results are promising for the
controlled growth of novel 1D and 2D nanostructures for nano-electronic devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter