Abstract:Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics 1 . Elucidation of the vapour–liquid–solid growth mechanism 2 has already enabled precise control over nanowire position and size 1 , 3 , 4 , 5 , 6 , 7 , 8 , yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal–organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) γ-LiAlO 2 and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [11̄0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Preferred Orientation of Sic Nanowires Induced by Substrates

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

Preferred growth direction of III–V nanowires on differently oriented Si substrates

Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition.

The Control of the Growth Orientations of Electrodeposited Single-Crystal Nanowire Arrays: a Case Study for Hexagonal CdS.

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Oriented Si nanowires grown via an SLS mechanism

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates

Control of growth orientation of GaN nanowires

Facile growth of oriented SiC nanowires arrays on carbon fiber cloth via CVD

Unusual Catalyst-Free Epitaxial Growth Of Silicon Nanowires By Thermal Evaporation

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

Lattice-directed growth of single-walled carbon nanotubes with controlled geometries on surface

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Inclined and ordered ZnO nanowire arrays developed on non-polar ZnO seed-layer films

Epitaxial Growth of Vertically Aligned and Branched Single‐Crystalline Tin‐Doped Indium Oxide Nanowire Arrays