Abstract:Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics 1 . Elucidation of the vapour–liquid–solid growth mechanism 2 has already enabled precise control over nanowire position and size 1 , 3 , 4 , 5 , 6 , 7 , 8 , yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal–organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) γ-LiAlO 2 and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [11̄0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

The Control of the Growth Orientations of Electrodeposited Single-Crystal Nanowire Arrays: a Case Study for Hexagonal CdS.

Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Directional CdS Nanowires Fabricated by Chemical Bath Deposition

Preparation and Characterization of CdS Nanowire Arrays by Dc Electrodeposit in Porous Anodic Aluminum Oxide Templates

Control of Crystallographic Growth Orientation and Twinning Structure in Copper Nanowires by Template-Assisted Electrodeposition

Highly Ordered and Well-Oriented Single-Crystal Cdte Nanowire Arrays by Direct-Current Electrodeposition

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

The Phase Selection Law in the Growth of Hexagonal Diamond Silicon Nanowires by Controlling Chemical Potential

Array-orderly single crystalline silicon nano-wires

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

Effective deposition potential induced size-dependent orientation growth of Bi-Sb alloy nanowire arrays

Growth of Aligned Cu2s Nanowire Arrays with Aao Template and Their Field-Emission Properties

Single-crystal growth of metallic nanowires with preferred orientation

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Modelling the Formation of High Aspect Cdse Quantum Wires: Axial-Growth Versus Oriented-Attachment Mechanisms

Growth mechanism and diameter control of well-aligned small-diameter ZnO nanowire arrays synthesized by a catalyst-free thermal evaporation method.

Epitaxial growth of aligned MgO nanowire arrays on a single crystalline substrate

Template-Free Growth of Vertically Aligned Cds Nanowire Array Exhibiting Good Field Emission Property