Abstract:There are two possible schemes for obtaining nanowires. During anisotropic growth, the tips of nanorods can be etched by introducing appropriate chemicals to actively activate the growth sites, thus enabling continuous anisotropic growth. In the directed attachment method, appropriate amines and controlled reaction conditions can modulate dipole‐dipole interactions, thereby facilitating the controlled formation of connections between nanorods. When the diameter of semiconductor nanowires is below the Bohr radius, confined excitons in the radial direction can freely move along the elongated axis direction, highlighting their potential for applications in quantum information and optoelectronic devices. Controlled anisotropic growth and oriented attachment are viable strategies for producing ultra‐long semiconductor nanowires with precisely controlled lengths and diameters. Anisotropic ZnSe nanorods are used as the initial seeds for the controlled anisotropic growth and oriented attachment methods. ZnSe nanorods/nanowires with limiting lengths of tens to hundreds of nanometers are produced. The advantages and limitations of semiconductor nanowires via controlled anisotropic growth and oriented attachment are summarized. The perspective for the promotion of controlled anisotropic growth and oriented attachment is discussed, which allows to promotion of the precise synthesis of semiconductor ultra‐long nanowires to develop the fundamental research and applications of ultra‐long semiconductor nanowires.

Modelling the Formation of High Aspect Cdse Quantum Wires: Axial-Growth Versus Oriented-Attachment Mechanisms

Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition.

Colloidal CdSe quantum wires by oriented attachment

A Thermodynamic Model of Diameter- and Temperature-dependent Semiconductor Nanowire Growth

Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods

The Control of the Growth Orientations of Electrodeposited Single-Crystal Nanowire Arrays: a Case Study for Hexagonal CdS.

Oriented attachment growth of quantum-sized CdS nanorods by direct thermolysis of single-source precursor.

From Cdte Nanoparticles Precoated on Silicon Substrate to Long Nanowires and Nanoribbons: Oriented Attachment Controlled Growth

Solution-Based Growth And Structural Characterization Of Homo- And Heterobranched Semiconductor Nanowires

Electronic Structure of [100]-Oriented Free-Standing Semiconductor Nanowires

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

Synthesis, Structure and Growth Mechanism of ZnS Nanowires with High Aspect Ratio

From Mesostructured Wurtzite ZnS-Nanowire/Amine Nanocomposites to ZnS Nanowires Exhibiting Quantum Size Effects: A Mild-Solution Chemistry Approach

Modeling InAs Quantum-Dot Formation on the Side Surface of GaAs Nanowires

Mechanisms of the Shape Evolution of CdSe Nanocrystals

Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Insight into the Growth of Anisotropic CdSe Nanocrystals: Attachment of Intrinsically Different Building Blocks

Improving the Photoresponse Properties of CdSe Quantum Wires by Alignment and Ligand Exchange.

An Analytical Model for the Bending of Radial Nanowire Heterostructures

Ultralong CdTe Nanowires: Catalyst‐Free Synthesis and High‐Yield Transformation into Core–Shell Heterostructures