Abstract:This study investigates the band alignment of the Zn0.8Mg0.2O/Sb2Se3 interface structure to improve solar cell application. Zn0.8Mg0.2O/Sb2Se3 interface exhibits a delta conduction band offset (ΔCBO) value of +0.193 eV, as obtained via the interface‐induced band bending method, with a spike structure. The findings of this study can help improve the Voc of Sb2Se3 solar cells by optimizing ΔCBO. This study investigates the band alignment of the Zn0.8Mg0.2O/Sb2Se3 interface structure to improve solar cell performance. Sb2Se3 is a promising absorber material. However, Sb2Se3 solar cells exhibit a lower conversion efficiency than CuInGaSe2 and CdTe solar cells. The lower efficiency of Sb2Se3 solar cells is attributed to the severe open‐circuit voltage loss caused by the band structure at the buffer/Sb2Se3 interface. Sb2Se3 solar cells typically employ CdS as the buffer layer, and the CdS/Sb2Se3 interface exhibits a cliff structure, which results in interfacial recombination. By contrast, a ZnMgO buffer layer can form a spike structure with Sb2Se3 at their interface, which reduces recombination and, as a result, enhances conversion efficiency. Therefore, this study employs the ZnMgO buffer layer and analyzes their material properties with various Mg contents and band structure at buffer/absorber layer interface. A ZnMgO buffer layer is sputter‐deposited on Sb2Se3. The optical bandgap of ZnMgO is 3.3–3.72 eV, corresponding to an Mg content of 0–0.35 at%. The carrier concentration indicates an appropriate doping level ranging from 1014 to 1016 cm−3. The Zn0.8Mg0.2O/Sb2Se3 interface is characterized via interface‐induced band bending. The Zn0.8Mg0.2O/Sb2Se3 interface exhibits a spike structure with a positive delta conduction band offset of +0.193 eV.

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