Silicon Nitride :Preparation and Current Research on Growth Kinetics

祝洪良,裴艳丽,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.12.011

2002-01-01

Abstract:This paper summarizes the application in microelectronics and the preparation of silicon nitride.Influencing factors,growth mechanism,kinetics of nitndation in nitrogen and research focus are discussed.

What problem does this paper attempt to address?

Nitrogen Ion-implantation in Silicon

裴艳丽,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2003.02.023

2003-01-01

Abstract:The paper summarizes research process in SOI formed by N ion-implantation in silicon.In the paper,the factors influcing nitrogen ion-implantation and the electric properties of implanted layer are discussed in details.Furthermore,N ion-implantation that is used in ultra-thin gate oxide parts and in restraining the diffusion of doped impurity is also described.
Recent Progress in Synthesis, Growth Mechanisms, Properties, and Applications of Silicon Nitride Nanowires

Yingjie Zhao,Shun Dong,Peitao Hu,Xiaoguang Zhao,Changqing Hong

DOI: https://doi.org/10.1016/j.ceramint.2021.02.139

IF: 5.532

2021-01-01

Ceramics International

Abstract:With advances in nanotechnology, nanowires have gained worldwide attention because of their novel properties and promising applications. Among them, silicon nitride (Si3N4) nanowires have attracted increasing attention due to their excellent performance and huge application potential. In this review, various synthesis methods of Si3N4 nanowires are introduced in detail, and then the growth mechanisms are also stated. Subsequently, the novel properties of Si3N4 nanowires including mechanical, optical, electrical, thermal, and wetting performance are highlighted. Applications corresponding to performance are also summarized later, such as composites, field emitters, field-effect transistors (FETs), photodetectors, photocatalysts, and microwave absorbers. Finally, the contents of this article are concluded and outlooks of future research directions are stated. This article reviews the recent advances and provides the prospects and challenges of Si3N4 nanowires.
Advancing in Research of One-dimensional Silicon Nano-materials

卢晓敏,汪雷,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2004.09.022

2004-01-01

Abstract:As silicon is the most important semiconductor material in micro-electronic field,one-dimensional nano-structures of silicon play an important role in the fields of device assembly,nanometer-size magnetic device,photoelectronics,and have drawn wide interest in the world. Recent progress in the research on silicon nanowires and silicon nanotubes is reviewed,and the research will be done is suggested.
The Advance of Research on Oxygen Precipitates in NCZ Silicon

ZHANG Taisheng,MA Xiangyang,YANG Deren

DOI: https://doi.org/10.3321/j.issn:1005-023x.2006.09.002

2006-01-01

Abstract:In recent years, nitrogen-doped czochralski silicon (NCZ)has attracted intensive attention from the industrial circle and academia. Oxygen precipitation is an important subject of defect engineering for CZ silicon. This paper overviews the latest achievements in the research of oxygen precipitation in NCZ silicon. The effects of nitrogen on the formation of grown-in oxygen precipitates, oxygen precipitates formed in the subsequent thermal cycles and the morphology of oxygen precipitates in NCZ silicon are elucidated in detail, thus the advantages of NCZ silicon are revealed.
New Progress in the Preparation and Application of High Performance Silicon Nitride Ceramics

Qingwen WU,Feng HU,Zhipeng XIE

DOI: https://doi.org/10.13957/j.cnki.tcxb.2018.01.003

2018-01-01

Journal of Ceramics

Abstract:Silicon nitride is a kind of structural ceramics with a great application prospect. With their excellent mechanical properties (high bending strength and hardness), high resistance to wear and corrosion and high temperature, high theoretical value of thermal conductivity. silicon nitride ceramics are widely used in modern industry and manufacturing. This paper discusses the preparation process of silicon nitride from the perspectives of its raw materials, sintering additives and sintering method and then introduces its applications in ceramic bearing and high thermal conductive electronic packaging substrate.
Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

HL Zhu,DR Yang,L Wang,DL Due

DOI: https://doi.org/10.1016/j.tsf.2004.09.006

IF: 2.1

2004-01-01

Thin Solid Films

Abstract:Silicon wafers were annealed in pure and low-purity nitrogen gas at temperatures from 800 to 1200 °C. The surfaces of the annealed samples were investigated by means of X-ray photoelectron spectroscopy and optical microscopy. It was found that silicon wafers could react with nitrogen molecules to form silicon nitride films at temperatures higher than 1100 °C in pure nitrogen atmosphere. The thickness of the silicon nitride films thermally grown in pure nitrogen gas at 1100 and 1200 °C for up to 4 h was measured. The maximum thickness was about 50 nm, and the growth kinetics of direct thermal nitridation at 1100 and 1200 °C was obtained.
Research Progress of Porous Silicon Nitride Ceramics

陕绍云,王亚明,贾庆明,杨建锋,高积强,金志浩

DOI: https://doi.org/10.16552/j.cnki.issn1001-1625.2009.01.005

2009-01-01

Abstract:This paper reviewed the recent progress about the studing on porous silicon nitride ceramics at home and abroad during recent years. The preparation methods of porous silicon nitride ceramics were summaried,and the influences of microstructure on their mechanical properties were analyzed. The performances of porous silicon nitride ceramics were compared with other porous ceramics. In future,the porous Si3N4 ceramics will have a very good prospect for the industrial application.
Research Progress of Silicon Nitride Prepared by Carbothermal Reduction Method

HU Yi-cheng,LI San-mei,SHAN Shao-yun,JIA Qing-ming,JIANG Li-hong,WANG Ya-ming

DOI: https://doi.org/10.16552/j.cnki.issn1001-1625.2012.05.036

2012-01-01

Abstract:The reaction mechanism of synthesis of silicon nitride by carbothermal reduction and nitridation was analyzed in this paper.The research progress of silicon nitride powder and porous silicon nitride ceramics prepared by carbothermal reduction method were summed.The current problems of carbothermal reduction technology were described,and the development of silicon nitride prepared by carbothermal reduction method was prospected.
Catalyst and Temperature Dependent Growth of Silicon Nitride Micro/Nanoribbons

Weiyou Yang,Huatao Wang,Shuzhen Liu,Zhipeng Xie,Linan An

DOI: https://doi.org/10.1166/jnn.2008.183

2008-01-01

Journal of Nanoscience and Nanotechnology

Abstract:One-dimensional micro/nanostructured silicon nitrides have attracted significant interests because they are potentially important for many applications due to its high stability, chemical inertness and capability for high-concentration doping. In this paper, single crystalline Si3N4 micro/nanoribbons were synthesized by catalyst-assisted pyrolysis of a polymeric precursor. The effects of catalyst and processing temperature on the morphology of the ribbons were investigated. The results revealed that both parameters can significantly influence the morphology of the ribbons, suggesting one-dimensional Si3N4 can be grown in a controllable manner by tailoring the processing conditions.
Progress in Research and Application of Gas-Pressure-Sintered Silicon Nitride Ceramics

YANG Liangliang,XIE Zhipeng,LI Shuang,SONG Ming

DOI: https://doi.org/10.13957/j.cnki.tcxb.2014.05.001

2014-01-01

Journal of Ceramics

Abstract:Silicon nitride is an attractive structural material with high strength, high hardness, excellent wear and corrosion resistance. The gas pressure sintering method for silicon nitride ceramics can increase the sintering temperature and thus promote the densification; also it is suitable for the specimens with complicated shapes. Thus, the gas pressing sintering method is an economical and practical method for preparing silicon nitride ceramics. This paper reviewed the fundamental principle and technical procedures of gas pressure sintering. Then, the application of silicon nitride in the bearing, aerospace and other fields was summarized.
Research Progress in SiN for Multicrystalline Silicon Solar Cells

王晓泉,杨德仁,席珍强

DOI: https://doi.org/10.3321/j.issn:1005-023X.2002.03.008

2002-01-01

Abstract:Due to the excellent antireflection and passivation,SiN film has been applied in the high-efficiency processing of multicrystalline silicon solar cells recently.In this paper,the properties and fabrication techniques of SiN are introduced,and existing problems and future prospect are reviewed.
Nitridation Of Silicon With Ammonia And Nitrogen

rene chaustowski,yong wang,jin zou,jisheng han,sima dimitrijev

DOI: https://doi.org/10.1142/S0219581X10006582

2010-01-01

International Journal of Nanoscience

Abstract:Silicon nitride and silicon oxynitride are materials used extensively in mechanical and electronic devices due to their outstanding properties. Thin films of silicon nitride and silicon oxynitride can be deposited on a silicon surface. In this study, nitridation of silicon wafers by a rapid thermal heating process with both nitrogen and ammonia as precursors was investigated by transmission electron microscopy, electron energy loss spectroscopy, and ellipsometry analyses. It was found that, under ammonia gas, the growth of nitride film was limited to 0.5 nm, whilst under the nitrogen atmosphere, a nitride film of 5-10nm could be formed at 1200 degrees C. The limited growth in ammonia suggests formation of high-quality passivating layer.
Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Alain E. Kaloyeros,Youlin Pan,Jonathan Goff,Barry Arkles

DOI: https://doi.org/10.1149/2162-8777/aba447

IF: 2.2

2020-01-08

ECS Journal of Solid State Science and Technology

Abstract:Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiN x ) and hydrogenated (SiN x :H) silicon nitride, as well as silicon nitride-rich films, defined as SiN x with C inclusion, in both non-hydrogenated (SiN x (C)) and hydrogenated (SiN x :H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors’ earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol. , 6 , 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.

materials science, multidisciplinary,physics, applied
One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Shanliang Chen,Weijun Li,Xiaoxiao Li,Weiyou Yang

DOI: https://doi.org/10.1016/j.pmatsci.2019.04.004

2019-01-01

Abstract:Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.
Research Progress in Growth of Aluminum Nitride Crystal

ZHAO Chaoliang,SONG Bo,ZHANG Xinghong,HAN Jiecai

DOI: https://doi.org/10.3969/j.issn.1005-023x.2012.09.003

2012-01-01

Abstract:Aluminum nitride(AlN) is a significant wide band-gap semiconductor material,which is propective in many semiconductor devices such as high-temperature,high-frequency,large-power electronic devices,optoelectro-nic devices,laser devices and so on.Physical vapor transport method(PVT) is one of the most effective method for the growth of AlN bulk crystal.Currently,Crystal IS Ltd,U.S.,N-Crystals Ltd,Russia,are capable to prepare AlN bulk crystal 2inch in diameter,which are in the leading position in this field.In order to obtain AlN crystal with large area and high quality,consistent search for compatible seed material is needed.From the earlier SiC seed,to the recent developed AlN seed and SiC/AlN seed,along with improved process conditions,a few research institutions have access to AlN crystal with large size in diameter and low defect density.During the past two years,high-quality AlN crystals have been successfully applied to the development of UV-LED.
Superconducting Diamond on Silicon Nitride for Device Applications

Henry A. Bland,Evan L. H. Thomas,Georgina M. Klemencic,Soumen Mandal,Andreas Papageorgiou,Tyrone G. Jones,Oliver A. Williams

DOI: https://doi.org/10.48550/arXiv.1810.10282

2018-10-24

Abstract:Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods of silicon nitride, were investigated. Such treatments provide control over the surface charge of the substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride substrates under CVD conditions produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.

Materials Science
Progress in Preparation and Properties of Porous Silicon Nitride Ceramics

Hong-kai Zha,Wen-qing Yu,Jing-wei Li,Jian Shi,Jun-cheng Li,Wen-ming Tang,Yin-he Lin,Kui-song Zhu,Ji-gui Cheng,Gui-cheng Liu

DOI: https://doi.org/10.1007/s12633-023-02525-0

IF: 3.4

2023-06-06

Silicon

Abstract:Porous silicon nitride ceramics is a promising functional ceramic material. In recent years, the research on the preparation of porous silicon nitride ceramics within different methods has been widely investigated. First, this work reviews the main synthesis methods of Si 3 N 4 porous ceramics in detail, and compares the differences between strength and porosity caused by each method. The characteristics and advantages of different technologies under the current conditions were evaluated. Second, the dielectric properties, sound absorption properties and permeability properties of silicon nitride ceramics were compared and summarized based on the experimental results. Third, the applications fields of porous silicon nitride ceramics, such as smelting industry, catalyst carrier, sound absorption, wave-transparent, and biomedical fields were explored. Finally, the assessment of different silicon nitride ceramics preparation technologies was elaborated. This review gives an outlook on the porous silicon nitride ceramics, which shows great potential for further research in this field.

materials science, multidisciplinary,chemistry, physical
Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics

Feng Hu,Zhi-Peng Xie,Jian Zhang,Zun-Lan Hu,Di An

DOI: https://doi.org/10.1007/s12598-020-01376-7

IF: 6.318

2020-02-19

Rare Metals

Abstract:<p class="a-plus-plus">High-thermal-conductivity silicon nitride ceramic substrates are indispensable components for next-generation high-power electronic devices because of their excellent mechanical properties and high thermal conductivities, which make them suitable for applications in complex and extreme environments. Here, we present an overview of the recent developments in the preparation of high-thermal-conductivity silicon nitride ceramics. First, the factors affecting the thermal conductivity of silicon nitride ceramics are described. These include lattice oxygen and grain boundary phases, as well the oxygen content of the crystal lattice, which is the main influencing factor. Then, the methods to prepare high-thermal-conductivity silicon nitride ceramics are presented. Recent work on the preparation of high-thermal-conductivity silicon nitride is described in detail, including the raw materials used and the forming and sintering processes. Although great progress has been made, the development of a high-quality, low-cost fabrication process remains a challenge. Nevertheless, we believe that high-thermal-conductivity silicon nitride substrates are promising for massive practical applications in the next generation of high-power electronic devices.</p>

materials science, multidisciplinary,metallurgy & metallurgical engineering
Mass Production of Α-Silicon Nitride Single-crystalline Nanowires

Lei Chao,Wei Fei

DOI: https://doi.org/10.15541/jim20180381

IF: 1.292

2019-01-01

Journal of Inorganic Materials

Abstract:α-silicon nitride single-crystalline nanowires were prepared by direct nitridation of granulation Si powders in N2-H2 mixture gas. The nitridation product has the core-shell structure (Si3N4 nanowires @ porous Si3N4 powders), where Si3N4 nanowires can be effectively separated by crushing and grinding. The results show that the as-prepared α-Si3N4 nanowires are straight and uniform with diameters of 80–150 nm, length to diameter ratios of 20–50, purity higher than 95wt%, and yield of 3.1%. Further study indicates that growth of Si3N4 nanowires is controlled by the Vapor-Liquid-Solid (VLS) mechanism, where the trace Fe elements serves as catalyst in the reduction atmosphere. In this study, The process of the raw silicom powder granulation after nitriding shows three advantages: 1) remarkably increasing growth space of nanowires; 2) leading to concentrated distribution of nanowire, tacilitating subsequent separation; 3) remarkably increasing the nitridation rate.
Synthesis and Characterization of Several alpha-Silicon Nitride Nanostructures

Hua Zhang,Shuyuan Zhang,Shuan Pan,Jianguo Hou

DOI: https://doi.org/10.1111/j.1551-2916.2005.00130.x

IF: 4.186

2005-01-01

Journal of the American Ceramic Society

Abstract:Silicon nitride (Si3N4) nanowires and nanobelts have been successfully prepared via direct crystallization of amorphous Si3N4 nanoparticles under high temperature in a N-2 flow. The products were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution electron microscopy, and electron diffraction. They are pure alpha-phase hexagonal single-crystal structures. The nanowires are long and smooth; nanobelts are long and twisted. In our samples, there exist some special nanostructures, such as wire-inserted hexagonal nanosheet and hollow-chain-shaped structure. The different growth modes were understood upon the observations and characterization of those microstructures. The solid-liquid-solid growth mechanism is also discussed.

Silicon Nitride :Preparation and Current Research on Growth Kinetics

Nitrogen Ion-implantation in Silicon

Recent Progress in Synthesis, Growth Mechanisms, Properties, and Applications of Silicon Nitride Nanowires

Advancing in Research of One-dimensional Silicon Nano-materials

The Advance of Research on Oxygen Precipitates in NCZ Silicon

New Progress in the Preparation and Application of High Performance Silicon Nitride Ceramics

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Research Progress of Porous Silicon Nitride Ceramics

Research Progress of Silicon Nitride Prepared by Carbothermal Reduction Method

Catalyst and Temperature Dependent Growth of Silicon Nitride Micro/Nanoribbons

Progress in Research and Application of Gas-Pressure-Sintered Silicon Nitride Ceramics

Research Progress in SiN for Multicrystalline Silicon Solar Cells

Nitridation Of Silicon With Ammonia And Nitrogen

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Research Progress in Growth of Aluminum Nitride Crystal

Superconducting Diamond on Silicon Nitride for Device Applications

Progress in Preparation and Properties of Porous Silicon Nitride Ceramics

Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics

Mass Production of Α-Silicon Nitride Single-crystalline Nanowires

Synthesis and Characterization of Several alpha-Silicon Nitride Nanostructures