Crystallization Kinetics of Non-Stoichiometric SbOx Thin Films

方铭,李青会,干福熹
DOI: https://doi.org/10.3321/j.issn:1005-3093.2004.01.001
2004-01-01
Abstract:Non-stoichiometric SbOx thin films were prepared by the method of reactive DC magnetron sputtering under different oxygen partial pressures. X-ray diffraction (XRD) spectra of the as-deposited and annealed films showed that the films changed from amorphous to crystalline states due to the heat-treatment. The peak temperatures of crystallization at different heating rates were determined by using differential scanning calorimeter (DSC) analysis. Based on the Kissinger formula, the crystallization activation energies of these amorphous films were calculated. The results showed that the activation energy increased with the increase of oxygen partial pressure, while the enthalpy difference between the as-deposited and the crystalline states decreased.
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