The Crystallization Kinetics of Co Doping on Ni–Mn–Sn Magnetic Shape Memory Alloy Thin Films
Chaolin Tan,Jiachen Zhu,Zhenhua Wang,Kun Zhang,Xiaohua Tian,Wei Cai
DOI: https://doi.org/10.1039/c8ra04618b
IF: 4.036
2018-01-01
RSC Advances
Abstract:Co doping is an effective means to improve the performance of Ni-Mn-Sn alloy bulks and thin films. However, the Co doping effect on the crystallization process of the Ni-Mn-Sn alloy thin films is important but not clear. Therefore, we investigate the influence of Co doping on the crystallization kinetics for Ni50Mn37-x Sn13Co x (x = 0, 0.5, 1.5, 4) magnetic shape memory alloy thin films by DSC analysis. For the non-isothermal process, each DSC curve has a single exothermic peak, which is asymmetrical. The crystallization peak temperatures and the activation energy of thin films both rise gradually with increasing Co content. Then, the activation energy of Ni50Mn37-x Sn13Co x (x = 0, 0.5, 1.5, 4) thin films obtained by the Kissinger equation method is determined as 157.9 kJ mol-1, 198.8 kJ mol-1, 213 kJ mol-1 and 253.6 kJ mol-1, respectively. The local activation energy of thin films with different Co content show the different variation tendency. In the isothermal crystallization, the average of the Avrami exponent n for thin films of each Co content is approximately 1.5, suggesting that the mechanism of crystallization is two-dimensional diffusion-controlled growth for Ni50Mn37-x Sn13Co x (x = 0, 0.5, 1.5, 4) thin films.