Abstract:We irradiate the single crystal boron-doped silicon (Si) at various laser fluences with 100 laser shots in ambient air at room temperature using an Nd:YAG laser and investigate its surface morphology and optical properties. The optical microscopy gives evidence of the formation of a crater and reveals that the heat-affected zone and melted area are increased with increase in laser fluence from 1.1 to 15.4 J/cm2. The micrographs obtained by scanning electron microscopy (SEM) show that the micro- and nano-structures such as microcracks, bubbles, nucleation sites, clusters, redeposited layered material, nanoparticles, and alike water droplet structures are formed on a laser-exposed Si surface. The optical profilometry of the irradiated Si further confirms the ablation and redeposition of the material and shows that the depth of the crater is increased from 12.1 to 15.2 μm with increase in fluence from 1.1 to 15.4 J/cm2. Raman spectroscopy of the samples shows that the irradiation generates anneal effects due to higher temperature, which increases the crystallinity of the Si. The ellipsometric analysis shows that the irradiation of Si with increasing laser fluence changes its optical constants (refractive index and extinction coefficient), which further influence its optical properties, e.g., reflectivity, absorptivity, and energy bandgap. The absorptivity of laser irradiated Si tends to increase with increasing laser fluence, and the energy bandgap is decreased accordingly due to increase in structural disorders. Our study shows that the controlled laser irradiation can tune the energy bandgap of exposed Si, and it makes the Si materials useful for the fabrication of optoelectronic devices such as solar cells, photovoltaic cells, and LEDs.

Study of the Surface Structure of the Silicon Silicon Nanocrystal During Laser Irradiation

Study on Silicon Crystal by Irradiation of Laser

Hole-net structure and photoluminescence emission monocrystalline on silicon irradiated by laser

Enhancement of Photoluminescence Emission in Low-Dimensional Structures Formed by Irradiation of Laser

EMISSION MODEL IN HOLE-NET STRUCTURE ON SILICON CRYSTAL BY IRRADIATION OF LASER

Optical properties of low-dimensional structures formed by irradiation of laser

Plasma Induced by Pulsed Laser and Fabrication of Silicon Nanostructures

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Preparation of Porous SiGe and Emission Enhancement in Near-infrared Area

Microstructure Evolution And Ft-Ir Spectra Of Silicon Induced By Pulsed Laser Irradiation

Laser Plasma Effects On Surface Damage Characteristics Of Silicon

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Irradiation Characteristics of Nanosecond Laser on Silicon under Vacuum Conditions

Localized Electronic States in Gaps on Hole-Net Structures of Silicon

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser.

Effect of excimer laser annealing on the silicon nanocrystals embedded in silicon-rich silicon nitride film

Effects of the Irradiation on Silicon by Femtosecond Laser of Various Energy Densities

Investigations on Surface Morphology and Bandgap Engineering of Single Crystal Boron-Doped Silicon Irradiated by a Nanosecond Laser.

Laser-induced self-organized periodic nano-hole/nano-ridge structures on the surface of silicon produced with a tightly focused femtosecond pulse laser beam

Investigation of the Structure and Optical Absorption of Silicon Coated with a Chromium Film after Femtosecond Laser Irradiation