Abstract:We report the photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser in different environments (deionized water and air) and energy density conditions. The field emission scanning electron microscope (FESEM) measurement results show the formation of completely different morphologies on silicon surface in different environments. A stripe-like microstructure on the silicon surface in air is formed in contrast to the smaller and coral-like microstructure generated in the deionized water. By using the energy dispersive spectroscopy (EDS) we find that silicon and oxygen is the main elemental composition on femtosecond laser-induced silicon surface, and the content of oxygen on the sample surface formed in the deionized water is nearly four times larger than that in air. The Si-Si bond (610 cm-1) and Si-O-Si bond vibrations (1105 cm-1) are detected mainly in the Fourier transform infrared transmission spectrum (FT-IR). The photoluminescence (PL) spectroscopy measurement results show that visible blue luminescence is observed both from the silicon ablated in the deionized water and in air, while the shape and position of the emitted luminescence peak are substantially the same. However, the luminescence intensity of silicon etched in the deionized water is close to 3 times stronger than that in air when the photoluminescence is excited at respective most suitable excitation wavelength. A more interesting phenomenon is that the position and shape of the photoluminescence peak in the visible range are basically not changed. The studies confirm that oxygen plays an important role in photoluminescence enhancement. Photoluminescence may be mainly generated by the formation of oxygen defects SiOx and the content of low oxide SiOx (x<2) determines the luminous intensity level.

EMISSION MODEL IN HOLE-NET STRUCTURE ON SILICON CRYSTAL BY IRRADIATION OF LASER

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

Role of Oxygen Concentration Distribution and Microstructure in Luminescent Properties of Laser-Irradiated Silicon

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Study on SOI Structure Irradiated by Electron and Annealled Treatment Using C–V, FTIR and PL

Near-infrared Light Emission from Si-rich Oxynitride Nanostructures

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Photoluminescence Responses of Si Nanocrystal to Differing Pumping Conditions

Photoluminescence and Carrier Transport Mechanisms of Silicon-Rich Silicon Nitride Light Emitting Device

Photoluminescence of Monocrystalline Silicon Irradiated by Femtosecond Pulsed Laser

Femtosecond-Laser-Induced Formation of Visible-Light-Emitting Structures Inside Silicon

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Narrow-Line Light Emission from Porous Silicon Multilayers and Microcavities

Surface Plasmonic Lasing in Micro-Nanostructures of Silicon Excited by Using Pulsed Infrared Lasers

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Evolution of photoluminescence in laser illuminating porous silicon

Structural Evolution and Effective Improvement of Emission Quantum Yields for Silicon Nanocrystals Synthesized by Femtosecond Laser Ablation in HF-contained Solution

On the Red Photoluminescence Emission from Surface-Oxidised Silicon Nanocrystals

Near-infrared Photoluminescence Radiation from the Interface of an Annealed ZnO Nano Thin Film/silicon Heterostructure Array

Photoluminescence of Face-Centered-cubic Structure Silicon Nanoparticles Deposited by Pulsed Laser Ablation