Abstract:We report the photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser in different environments (deionized water and air) and energy density conditions. The field emission scanning electron microscope (FESEM) measurement results show the formation of completely different morphologies on silicon surface in different environments. A stripe-like microstructure on the silicon surface in air is formed in contrast to the smaller and coral-like microstructure generated in the deionized water. By using the energy dispersive spectroscopy (EDS) we find that silicon and oxygen is the main elemental composition on femtosecond laser-induced silicon surface, and the content of oxygen on the sample surface formed in the deionized water is nearly four times larger than that in air. The Si-Si bond (610 cm-1) and Si-O-Si bond vibrations (1105 cm-1) are detected mainly in the Fourier transform infrared transmission spectrum (FT-IR). The photoluminescence (PL) spectroscopy measurement results show that visible blue luminescence is observed both from the silicon ablated in the deionized water and in air, while the shape and position of the emitted luminescence peak are substantially the same. However, the luminescence intensity of silicon etched in the deionized water is close to 3 times stronger than that in air when the photoluminescence is excited at respective most suitable excitation wavelength. A more interesting phenomenon is that the position and shape of the photoluminescence peak in the visible range are basically not changed. The studies confirm that oxygen plays an important role in photoluminescence enhancement. Photoluminescence may be mainly generated by the formation of oxygen defects SiOx and the content of low oxide SiOx (x<2) determines the luminous intensity level.

Femtosecond-Laser-Induced Formation of Visible-Light-Emitting Structures Inside Silicon

Visible Luminescence from Silicon Surfaces Fabricated by Femtosecond Laser Pulses

Photoluminescence of Monocrystalline Silicon Irradiated by Femtosecond Pulsed Laser

Luminescence of Black Silicon Fabricated by High-Repetition Rate Femtosecond Laser Pulses

Role of Oxygen Concentration Distribution and Microstructure in Luminescent Properties of Laser-Irradiated Silicon

Optically Pumped Mid-Infrared Light Emitter on Silicon

Strong Infrared Photoluminescence from Black Silicon Made with Femtosecond Laser Irradiation

Time-Resolved Photoluminescence of Silicon Microstructures Fabricated by Femtosecond Laser in Air

Photoluminescence of Face-Centered-cubic Structure Silicon Nanoparticles Deposited by Pulsed Laser Ablation

Luminescence from Si/SiO 2 with Si Implantation

Laser-induced self-organized periodic nano-hole/nano-ridge structures on the surface of silicon produced with a tightly focused femtosecond pulse laser beam

Progressive Evolution of Silicon Surface Microstructures Via Femtosecond Laser Irradiation in Ambient Air

Photoinduced Microchannels Inside Silicon by Femtosecond Pulses

In situ photoluminescence studies of photochemically grown porous silicon

Photoinduced microchannels and element change inside silicon by femtosecond laser pulses

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Femtosecond Laser-Induced Mesoporous Structures on Silicon Surface

Mechanisms of Visible Photoluminescence from Nanoscale Silicon Cones

Photoinduced Multiple Microchannels Inside Silicon Produced by a Femtosecond Laser