Abstract:The dc characteristics degradation of 0.18 μm metal-oxide-semiconductor field effect transistors (MOSFETs) after 10 MeV proton irradiation is comprehensively investigated in this paper. The measured results show that the off-state drain current is increased in N-channel MOSFETs, which is due to the turn on of the parasitic transistors induced by the shallow trench isolation regions. While in P-channel MOSFETs, the threshold voltage increase (absolute value), the transconductance degradation, and the saturation drain current decrease are observed. From the analysis, it is concluded that the basic damage mechanism is not ascribed to the gate oxide and the isolation region. The origin of the observed changes may be mainly due to the damage in the spacer oxides of the transistors. In order to verify the assumption, the leakage current passing through the spacer between the gate and the drain is measured before and after irradiation with floated source/substrate and grounded drain. We find that the leakage current is two to three times larger after irradiation. Finally, in order to confirm the extrapolation, 2-dimension (2D) simulation has been performed with Synopsys TCAD (technical computer-aided design) Sentaurus Device Simulation tools (ISE 10.0). The behavior of the simulated charges trapped in the spacers is qualitatively consistent with the experimental results.

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Effect of Irradiation on MOS Transistor Induced by Focused Ion Beam

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Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Systematic study of FIB-induced damage for the high-quality TEM sample preparation

Focused Ion Beam In Failure Analysis Of Microelectronic Devices

Impact of the Displacement Damage in Channel and Source/Drain Regions on the Dc Characteristics Degradation in Deep-Submicron Mosfets after Heavy Ion Irradiation

Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

Analysis of Defects Formation and Mobility During Ion Irradiation by Coherent Precipitates

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Identification of localized radiation damage in power MOSFETs using EBIC imaging

Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors.

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Characterization of Focused-Ion-Beam-Induced Damage in N-Type Silicon Using Schottky Contact

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Study of damage generation induced by focused helium ion beam in silicon

Study on the damage of Fe80B13Si7 alloy with different structure by high-intensity pulsed ion beam irradiation