Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Investigation on the Thermodynamics and Kinetics of the Growth of SiC Single Crystal

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Novel Method for High Speed SiC Vapor Growth

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

A review of the simulation studies on the bulk growth of silicon carbide single crystals

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

The Growth of Si on Sic Complex Substrate by Cvd

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures