Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Stress Reliability Study of GaN HEMT Devices

Distinct Short Circuit Capability of 650-V <i>p</i>-GaN Gate HEMTs under Single and Repetitive Tests

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability