Abstract:Abstract Silicon carbide (SiC) has been widely utilized in semiconductor industry for the development of high power electrical devices. Using chemical vapor deposition (CVD) to grow a thin epitaxial layer onto SiC substrate surface with orderly lattice arrangement, good surface morphology and low doping concentration is required. During epitaxial growth, the high reaction temperature and its distribution are generally difficult to measure and will affect the properties of epitaxial growth layer. This study presents a thermal-field testing method based on process temperature control rings (PTCRs) to measure the high temperature distribution inside the epitaxial growth reaction chamber, and to study the effects of reaction chamber structure and epitaxial growth parameters on the quality of epitaxial layer. The measurement accuracy of PTCRs was characterized using silicon melting experiments and the measuring principle of PTCRs was presented. The thermal field of the reaction chamber was then numerically simulated and compared with experimental results. The experiment results exhibit a temperature gradient of less than 0.4 °C/mm on surface, indicating good temperature uniformity. Epitaxial growth is an essential process in the fabrication of SiC devices, as it enables the production of layers with precise doping density and thickness. The SiC epitaxial growth experiments were conducted to study the effects of gas flow ratio and doping flow ratio of three inlet flow channels on the thickness and doping concentration distributions. The results demonstrated that the non-uniformity of thickness and doping concentration of epitaxial layer was below 1.5 % and 4.0 %, respectively.

The Influence of Temperature on the Silicon Droplet Evolution in the Homoepitaxial Growth of 4H-Sic

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Influence of silicon cluster on epitaxial growth of silicon carbide

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

The Growth of Si on Sic Complex Substrate by Cvd