Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Defects in Hydrogen Implanted SiC

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

H+ Implantation Induced Defects Distribution in 4H-Sic Single Crystal Film Fabricated by Crystal-Ion-Slicing and Its Effects on Electrical Behavior: A Multiple Characterization Study

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Optical Spectroscopy Study of Damage Evolution in 6H-Sic by H2+ Implantation

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

The Structural Evolution of Light-Ion Implanted 6H-Sic Single Crystal: Comparison of the Effect of Helium and Hydrogen

Transmission Electron Microscopy and High-Resolution Electron Microscopy Studies of Structural Defects Induced in Si Single Crystals Implanted by Helium Ions at 600 °C

Structural and Optical Properties of 6h–sic Helium-Implanted at 600 K

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-Sic

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Study in hydrogen ion irradiation of N+-ion-implanted SiC-C films

Mechanical properties and indentation-induced phase transformation in 4H–SiC implanted by hydrogen ions

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Implantation temperature and thermal annealing behavior in H 2 + -implanted 6H-SiC