Abstract:Using first-principles density functional theory combined with non-equilibrium Green's function method, we investigate the spin-dependent current generated by photogalvanic effect (PGE) in photoelectric devices based on zigzag silicence nanoribbons with unsymmetrical sp(2)-sp(3) hydrogen passivated edges (H-2H ZSiNRs) and C-s symmetry. Due to their unique atomic structures and spin-semiconductor properties, we find that the flow direction of different spin channels, spin polarization and magnitude of the photocurrent can be efficiently controlled by tuning the photon energy (E-ph) or polarization/helicity angle (theta) of the incident polarized light. Interestingly, at certain polarization/helicity angles or certain photon energy, 100% spin polarized current can be achieved by either linearly or elliptically polarized light. Further, robust pure spin current without an accompanying charge current can be achieved by the irradiation of linearly and elliptically polarized light when the two leads are in antiparallel magnetic configuration and theta = 0 degrees, 90 degrees and 180 degrees. Most importantly, without suffering from Schottky barriers or tunnel barriers at metal-semiconductor interfaces, the generated pure spin current or fully spin polarized current in such a purely two-dimensional device with PGE is several orders of magnitude larger than those achieved in metal/semiconductor/metal structures. These numerical results suggest that the asymmetrically sp(2)-sp(3) terminated ZSiNRs are promising materials for construction of novel photoinduced pure spin current and fully spin polarized current generators, which will be of great significance in future spintronic applications.

A high-efficiency spin polarizer based on edge and surface disordered silicene nanoribbons

Spin-Semiconducting Properties in Silicene Nanoribbons

Gated Silicene as a tunable source of nearly 100% spin-polarized electrons

Photomodulated Edge States and Multiterminal Transport in Silicenelike Nanoribbons

The Design of Bipolar Spin Filtering Junction in Zigzag Silicene Nanoribbons

Spin-filtering and rectifying effects for Al-doped zigzag-edged silicene nanoribbons with asymmetric edge hydrogenation

Spontaneous Symmetry Lowering of Si (001) Towards Two-Dimensional Ferro/antiferroelectric Behavior

Dual spin filtering and dual spin diode through a zigzag silicene nanoribbon

Transport properties of bare and hydrogenated zigzag silicene nanoribbons: Negative differential resistances and perfect spin-filtering effects

Spatial Selected Spin Filtering Effect in Z-Shaped MoS 2 Nanoribbon

Spatial Selected Spin Filtering Effect in Z-Shaped MoS2 Nanoribbon

Modulation of edge defects on dual-spin filtering in zigzag β -SiC7 nanoribbons

Tuning spin filtering and spin rectifying behaviors of zigzag silicon carbon nanoribbons by edge dual-hydrogenation

Giant Magnetoresistance in Silicene Nanoribbons

Realizing Stable Fully Spin Polarized Transport in SiC Nanoribbons with Dopant

Perfect Spin And Valley Polarized Quantum Transport In Twisted Sic Nanoribbons

Robust Generation Of Half-Metallic Transport And Pure Spin Current With Photogalvanic Effect In Zigzag Silicene Nanoribbons

HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE

Electric-field Strength and Doping Level Controlled Spin-Valley Transport in a Silicene Np Junction

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Electron Delocalization in Gate-Tunable Gapless Silicene