Abstract:Highlights • The band bending effect can greatly modulate the energy band, G , and P KK' of ZSiNRs. • With increasing U AE , the energy region of P KK' < 0 ( P KK' > 0) increases (decreases). • As U SE increases, the P KK' = 0 plateau widens, while its non-zero plateaus narrow. • When U AE or U SE is large enough, the band bending effect begins to decrease. • ZSiNRs under edge electric fields may applied to valleytronic devices. This work examines the effect of band bending on the valley polarization of electron transport through zigzag silicene nanoribbons (ZSiNRs) subject to perpendicular edge electric fields. When the edge electric fields are antisymmetric, the induced edge potential ( U AE ) determines the Fermi energy ( E F ) at which the valley polarization P KK' changes sign. In the band-bending region, P KK' shows plateaus with values of −1/3, −1/5, −1/7, etc. The band bending and the energy region with P KK' < 0 grow as U AE increases. When U AE = 0.63 t ( t = 1.6 eV) and | E F | < 0.625 t, P KK' < 0 When the edge electric fields are symmetric, a conductance gap appears near E F = 0, two energy regions with P KK' = 0 arise in the band-bending region, and the induced edge potential U SE dictates the Fermi energy at which P KK' changes from 0 to non-zero values. With increasing U SE , the band bending increases, and the width of the conductance gap and energy regions with P KK' = 0 widen, and plateaus with P KK' = ±1, ±1/3, ±1/5, etc. vanish one by one. When U SE = 0.8 t and | E F | < 0.625 t , the valley polarization of electron transport disappears completely. As U AE or U SE increases to a certain degree, the band bending diminishes quickly, and the case of small U AE or U SE gradually recovers. According to the above results, ZSiNRs under symmetric or antisymmetric perpendicular edge electric fields have potential applications in manufacturing versatile valleytronic devices. Graphical abstract Download : Download high-res image (410KB) Download : Download full-size image

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