Abstract:Constructing nanoscale spin devices has been a crucial pursuit in the field of nano spintronics. Here, by using the density functional theory (DFT) and nonequilibrium Green's function (NEGF) method, high-performance nanoscale spin-MOSFET devices using half-metallic 2D Cr2Se3 as electrodes are theoretically designed. Specifically, seven typical two-dimensional (2D) semiconductors, Sb, Bi, BP, BAs, MoTe2, WTe2, and WSeTe (with two different contacting surfaces), are considered here as the channel materials. The properties of contact interfaces between these 2D semiconductors and half-metallic 2D Cr2Se3 are first investigated. It is found that except BP and BAs (having Schottky contacts with Cr2Se3), the other 2D semiconductors have vertical Ohmic contacts with Cr2Se3 among which Cr2Se3/Sb, Cr2Se3/MoTe2, Cr2Se3/WTe2, Cr2Se3/WSeTe-Se, and Cr2Se3/WSeTe-Te retain the half-metallic characteristic. Then, these 2D semiconductors with Ohmic vertical contacts are further used to construct spin-MOSFET devices. The results show that devices constructed by half-metallic vertical contacting systems have nearly 100% SIE and therefore giant MR (>107%) when the gate voltage varies. Furthermore, four designed spin-MOSFET devices, namely, Cr2Se3/MoTe2, Cr2Se3/WTe2, Cr2Se3/WSeTe-Se, and Cr2Se3/WSeTe-Te spin-MOSFET have high efficient gate modulations on the magnitude of completely spin-polarized source-drain current with Cr2Se3/WTe2 having the smallest SS value of 134.1 mV/dec. The calculations suggest that Cr2Se3 is a good candidate for constructing spin-MOSFET devices. Our study sheds light on the design of high-performance nanoscale spin-MOSFET devices by using two-dimensional half-metallic electrodes.

HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE

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