Abstract:Silicene is recognized as a promising candidate of two-dimensional (2D) materials replacing bulk silicon in the post-CMOS era, because of its compatibility with silicon-based technologies. However, the Dirac-cone band structure, because of the honeycomb lattice, prevents pristine silicene from being applied as a semiconductor in electronic devices. Here, we propose a 2D-silicon semiconductor by introducing kagome topology into the honeycomb lattice, i.e., a hybrid honeycomb-kagome (hhk) structure that is referenced as hhk-silicene. Our first-principles calculations demonstrate the high geometric stability and excellent semiconducting properties of the hhk-silicene, which opens up an electronic bandgap comparable to that of the bulk silicon and bears an electron mobility as high as that of the honeycomb silicene. By designing a field-effect transistor based on the hhk-silicene, giant negative differential resistance and switching performance fulfilling the requirements of ITRS (International Technology Roadmap for Semiconductors) are predicted. This work opens up the possibility of rational design of 2D-silicon semiconductors by focusing on the topological lattice structures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsmaterialslett.1c00259?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsmaterialslett.1c00259</a>.Details of mobility computations, AIMD simulations, devices switching performance, computational details of devices parameters, NDR results of different FETs, crystal structure information on the hhk-silicene, a summary of the methods used for device simulations, vibrational modes associated with the Raman peaks, and linear-scale plots of the output and transfer characteristics of the hhk-silicene FETs (<a class="ext-link" href="/doi/suppl/10.1021/acsmaterialslett.1c00259/suppl_file/tz1c00259_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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