Multifunctional Spintronic Device Based on Zigzag SiC Nanoribbon Heterojunction Via Edge Asymmetric Dual-Hydrogenation

Xing-Qian Cui,Jia-Jin Li,Qian Liu,Dan Wu,Hai-Qing Xie,Zhi-Qiang Fan,Zhen-Hua Zhang
DOI: https://doi.org/10.1016/j.physe.2021.115098
IF: 3.369
2021-01-01
Physica E Low-dimensional Systems and Nanostructures
Abstract:The authors propose a method to obtain the multifunctional spintronic device by investigating the spin-resolved transport characteristics of zigzag SiC nanoribbon (zSiCNR) heterojunction via edge asymmetric dualhydrogenation. The spin-resolved band structures show that the dual-hydrogenation on edge C or Si atoms all can change the initial metallicity of the pristine zSiCNR with the edge mono-hydrogenation to semiconductor in the presence of ferromagnetic field. The spin-resolved current-voltage characteristics of the zSiCNR heterojunction can show spin current rectification in the same rectify direction under the parallel magnetic field. The up-spin rectification ratio of our junction can be close to 1013 at -0.5 V, which is much larger than rectification ratios of the previous junctions induced by the anti-parallel magnetic field. The zSiCNR heterojunction also exhibits a perfect spin filtering behavior with 100% spin filtering efficiency in both positive and negative bias regions under the anti-parallel magnetic field. More interestingly, the magnetoresistance is achieved by manipulating the external magnetic field in our zSiCNR heterojunction with the giant magnetoresistance ratio 5000% at 0.5 V. Therefore, the zSiCNR heterojunction via edge asymmetric dual-hydrogenation can be designed into the multifunctional spintronic devices, which has broad application prospects in the field of future spintronics.
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