Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

Shu-Ling Deng,Wen Zhou,Qian Liu,Dan Wu,Zhi-Qiang Fan,Fang Xie
DOI: https://doi.org/10.1016/j.physb.2024.416586
2024-01-01
Abstract:Using the first-principles calculations, we investigate the electronic and magnetic properties of armchair silicon carbide nanoribbon (aSiCNR) with different combinations of edge dual-hydrogenation. The dual-hydrogenation on the boundary Si or C atom changes it from sp(2) hybridization to sp(3) hybridization, which will have an important role on the stability of aSiCNR. Only the full dual-hydrogenation on the one edge or two edges don't change the band structure and magnetic moment of aSiCNR. However, the other different combinations of edge dual-hydrogenation can result in aSiCNR exhibiting metallic, semiconductor, and half-metallic properties under non-magnetism state, ferromagnetic and anti-ferromagnetic states. These results may present a new avenue for band engineering of aSiCNR, as well as valuable suggestions for the practical application of SiC based nanomaterials in spintronics and multifunctional nanodevices.
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