Abstract:The geometry and electronic properties of bilayer silicene nanoribbons with different widths, zigzag, armchair, and edge hydrogenation stacking modes were investigated using the self-consistent charge density functional tight-binding (SCC-DFTB) method. The results show that edge hydrogenation enhances the binding energy of the nanoribbon by adsorbing hydrogen to reduce the hanging bonds of Si, thus stabilizing the silicene and adjusting its electronic properties by affecting the energy gap. With the increase of nanoribbon width, the regular fold of the nanoribbon surface increases. Edge hydrogenation can significantly improve the binding energy of nanoribbons. For the top-type stacking (type-AA) nanoribbon, when the width of the nanoribbon is < 10, the energy gap is significantly affected by edge hydrogenation, and the energy gap decreases significantly with the increase of width. When n L > 10, the energy gap is not affected by the width, and the nanoribbon gradually shows stable semi-metallic properties. For type-AB nanoribbons, the energy gap shows a W-shaped fluctuation with increasing width under the effect of edge hydrogenation. Comparing the two stacking methods, we can find that the energy gap of the misaligned stacked nanoribbons is more sensitive to changes in the width and edge hydrogenation. This study has realized the transformation of silicene nanoribbons from semiconductor to semi-metal and metal properties in different ways. The electrons in the nanoribbons are transferred to the protruding parts of the fold or bend in the structure. The larger the extent of the protruding parts of the structure, the greater the amount of charge transferred.

First-principles study on edge–edge interactions of bilayer zigzag SiC nanoribbons

Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

Coupling of Magnetic Edge States in Li-intercalated Bilayer and Multilayer Zigzag Graphene Nanoribbons

Tuning the Electronic and Magnetic Properties of the Si Nanoribbons Through Dangling Bond

Electronic Structures of SiC Nanoribbons.

Structural and Electromagnetic Properties of Double C Chains Decorated Zigzag Silicene Nanoribbon

Structural and Electronic Properties of a Single C Chain Doped Zigzag Silicene Nanoribbon

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate

Dangling Bond Modulating the Electronic and Magnetic Properties of Zigzag Sige Nanoribbon

Electronic characterization of bilayer silicene nanoribbons

Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate-v2

Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

Edge-controlled half-metallic ferromagnetism and direct gap in ZrS2 nanoribbons

Bandgap Modulations of Silicon Carbon Nanoribbons by Transverse Electric Fields: A Theoretical Study

First-principles Study of Electronic Properties of F-terminated Silicon Nanoribbons

Structure and electrical properties of bilayer zigzag silicene nanoribbons depending on stone-wales and applied electric fields by SCC-DFTB method

Edge-controlled half-metallic ferromagnetism and direct-gap semiconductivity in ZrS2 nanoribbons

Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies

Nitrogen and Boron Substitutional Doped Zigzag Silicene Nanoribbons: Ab Initio Investigation