Abstract:A unique semi‐coherent phase interface, characterized by low lattice mismatch, ensures high carrier mobility while reducing the lattice thermal conductivity at low and medium temperatures of the matrix. Coupled with the dynamic doping effect of Cu, the electrical and thermal transport properties of the n‐type PbSe samples are comprehensively enhanced. N‐type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single‐band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n‐type PbSe involves reducing lattice thermal conductivity (κlat) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n‐type AgCuTe‐alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag2Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi‐coherent phase boundary is observed between the PbSe matrix and the Ag2Te nanoprecipitates. This semi‐coherent phase interface effectively scatters low‐frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high‐temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n‐type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.

High Performance of N-Type (Pbs)(1-X-y)(pbse)(x)(pbte)(y) Thermoelectric Materials

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High Performance Thermoelectrics from Earth-Abundant Materials: Enhanced Figure of Merit in PbS by Second Phase Nanostructures.

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Multiscale structure and band configuration tuning to achieve high thermoelectric properties in n-type PbS bulks

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Valence Disproportionation of GeS in the PbS Matrix Forms Pb5Ge5S12 Inclusions with Conduction Band Alignment Leading to High N-Type Thermoelectric Performance.

Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS

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Optimizing the thermoelectric performance of n-type PbSe through dynamic doping driven by entropy engineering