Abstract:Ge complementary metal oxide semiconductor (CMOS) is promising for scaling beyond the Si CMOS due to its higher carrier mobility than Si. Analogue to classical SiO2/Si system in the Si CMOS technology, various interface/bulk charges including interface traps (Q(it)), fixed surface state charges (Q(f)), trapped positive charges (Q(pt)) and negative charges ((Q(nt)) in GeO2/Ge system are also crucial both for the device performance and reliability. Because small amounts of charges would cause photoemission peak shift characterized by x-ray photoemission spectroscopy (XPS), it offers a feasible way to evaluate various charge densities by measuring the band bending in Ge substrate from Ge 3d core-level energy shift at GeO2/Ge interface. Moreover, photoemission peak shifts as a function of x-ray irradiation time have been widely accepted for characterization of charge trapping phenomena. Here, we report a band bending analysis at GeO2/Ge interface of featuring vital charge characteristics for diverse device applications by XPS. HF-last cleaned Ge surface was verified to tend to be p-type, irrespective of the bulk conductivity. The n-Ge/GeO2 interfaces exhibit a reduction of upward band bending evolution of Ge substrate, while p-type-Ge/GeO2 interfaces indicate a reduction of downward band bending evolution when comparing the different quality GeO2/Ge interfaces. Based on the requirement of surface charge neutrality, such observation has been attributed to a dominated passivation effect to negatively charged interface traps and the positive fixed surface state charges, respectively. Moreover, a time evolution of Ge 3d and O 1s signals reveals a progressive band bending modification at GeO2/Ge interface, clarifying the thermally-grown GeO2 also contains electron traps (Q(nt)). Ultimately, the four types of charges relying on the GeO2/Ge quality were modeled to correlate with the observed Ge band bending evolution, which would impact both the device operation and reliability.

Angular Dependent XPS Study of Surface Band Bending on Ga-polar N-Gan

Accurate Surface Band Bending Determination on Ga-polar N-Type GaN Films by Fitting X-Ray Valence Band Photoemission Spectrum

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Surface Region Band Enhancement in Noble-Gas Adsorption Assisted Angle-Resolved Photoemission Spectroscopy on the Kagome Superconductor RbV3Sb5

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Determination of the Surface Band Bending in in X Ga1-x N Films by Hard X-Ray Photoemission Spectroscopy.

Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Investigation on Surface of p-GaN

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS

Band bending of cleaved GaAs(110) surface

Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

The In-Plane Anisotropy of the Effective G Factors in Al0.25Ga0.75N/GaN Based Quantum Point Contacts with Narrow Channels

External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers

Surface region band enhancement in noble gas adsorption assisted ARPES on kagome superconductor RbV3Sb5

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Band bending analysis of charge characteristics at GeO2/Ge interface by x-ray photoemission spectroscopy

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Electrical and Optical Properties of G-Gan/al0.5ga0.5n 2D/3D Heterojunction under Surface Oxidation Via First-Principles

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface