Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation

In-Memory Direct Processing Based On Nanoscale Perpendicular Magnetic Tunnel Junctions

Stateful Reconfigurable Logic Via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

Boolean Logic Operations Based on Four-Terminal Magnetic Tunnel Junction for Computing in Memory

Implementation of 16 Boolean Logic Operations Based on One Basic Cell of Spin-Transfer-torque Magnetic Random Access Memory

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Stateful Implication Logic Based on Perpendicular Magnetic Tunnel Junctions

Pj-AxMTJ: Process-in-memory with Joint Magnetization Switching for Approximate Computing in Magnetic Tunnel Junction

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction with Enhanced Thermal Stability Recording Structure

Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor

Reconfigurable Processing in Memory Architecture Based on Spin Orbit Torque

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

In-memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs

Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

High-Density, Low-Power Voltage-Control Spin Orbit Torque Memory with Synchronous Two-Step Write and Symmetric Read Techniques.

Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory

An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device