Abstract:There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 {\Omega}-{\mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.

Pj-AxMTJ: Process-in-memory with Joint Magnetization Switching for Approximate Computing in Magnetic Tunnel Junction

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

In-Memory Direct Processing Based On Nanoscale Perpendicular Magnetic Tunnel Junctions

Interplay Bitwise Operation in Emerging MRAM for Efficient In-memory Computing

Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation

High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction with Spin-Hall Assistance

Compact Modeling of Perpendicular-Magnetic-Anisotropy Double-Barrier Magnetic Tunnel Junction with Enhanced Thermal Stability Recording Structure

Boolean Logic Operations Based on Four-Terminal Magnetic Tunnel Junction for Computing in Memory

Novel Magnetic Tunneling Junction Memory Cell with Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

High-Density, Low-Power Voltage-Control Spin Orbit Torque Memory with Synchronous Two-Step Write and Symmetric Read Techniques.

Phase-change-assisted spin-transfer torque switching in perpendicular magnetic tunnel junctions

Implementation of 16 Boolean Logic Operations Based on One Basic Cell of Spin-Transfer-torque Magnetic Random Access Memory

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Thermal Stable and Fast Perpendicular Shape Anisotropy Magnetic Tunnel Junction

Robust magnetic full-adder with voltage sensing 2T/2MTJ cell

Compact Modeling of High Spin Transfer Torque Efficiency Double-Barrier Magnetic Tunnel Junction.

Electrical Modeling of Stochastic Spin Transfer Torque Writing in Magnetic Tunnel Junctions for Memory and Logic Applications

Complementary Series-connected STT-MTJ for Time-based Computing-in-Memory

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution