Abstract:Computing in memory (CiM) architecture enables computation within the memory array, reducing power-intensive data transmission between the processor and memory. The primary goal of this work is to enhance the energy efficiency of CiM architectures that use spintronic devices. Experiments show that the thermal stability ( ) in magnetic tunnel junctions (MTJs) can be optimized to reduce write energy by adjusting the oxide layer thickness. Based on this finding, this work explores a novel spin-orbit torque random-access memory (SOT) cell that yields a 30% increase in energy efficiency compared to conventional SOT. However, reducing the oxide layer thickness below 1.5 nm to tune leads to a decrease in the tunnel magnetoresistance (TMR) ratio leading to reliability concerns. The second part of the work proposes to improve TMR by replacing the conventional MgO oxide layer with a TiCoSb Heusler alloy-based layer and utilizing as the electrode in the modified cell called M-SOT. Theoretical and experimental studies demonstrate that this alternative MTJ design exhibits TMR ratios comparable to values reported in the literature. The performance of magnetic full adder CiM design using the proposed M-SOT is compared with designs implemented using CMOS, spin-transfer torque random-access RAM (STT), and conventional SOT. Evaluations show that the M-SOT-CiM has a reduction of 66% and 30% in logic and data transfer energy, respectively, compared to conventional SOT-CiM design. Furthermore, the data storage and computation operations in M-SOT-CiM are found to be significantly faster compared to both STT- and SOT-CiM design. Overall, this work presents a promising SOT design that effectively bridges the gap between the processor and memory by enabling logical functions within memory, eliminating the need for additional circuits.

TiCoSb Heusler alloy-based magnetic tunnel junction for efficient computing in memory architecture

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

A 5T-2MTJ STT-assisted Spin Orbit Torque based Ternary Content Addressable Memory for Hardware Accelerators

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Performance of lead-free double perovskite-based magnetic tunnel junction memory

Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Low‐power and Field‐free Perpendicular Magnetic Memory Driven by Topological Insulators

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance

Cascadable In-Memory Computing Based on Symmetric Writing and Read Out

Pj-AxMTJ: Process-in-memory with Joint Magnetization Switching for Approximate Computing in Magnetic Tunnel Junction

Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

IMCS2: Novel Device-to-Architecture Co-Design for Low-Power In-Memory Computing Platform Using Coterminous Spin Switch

Superconductor bistable vortex memory for data storage and in-memory computing

A Multiplexer-Based High-Capacity Spintronic Synapse