Abstract:Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between logic and memory modules. A new paradigm, called "computational random-access memory (CRAM)" has emerged to address this fundamental limitation. CRAM performs logic operations directly using the memory cells themselves, without having the data ever leave the memory. The energy and performance benefits of CRAM for both conventional and emerging applications have been well established by prior numerical studies. However, there lacks an experimental demonstration and study of CRAM to evaluate its computation accuracy, which is a realistic and application-critical metrics for its technological feasibility and competitiveness. In this work, a CRAM array based on magnetic tunnel junctions (MTJs) is experimentally demonstrated. First, basic memory operations as well as 2-, 3-, and 5-input logic operations are studied. Then, a 1-bit full adder with two different designs is demonstrated. Based on the experimental results, a suite of modeling has been developed to characterize the accuracy of CRAM computation. Scalar addition, multiplication, and matrix multiplication, which are essential building blocks for many conventional and machine intelligence applications, are evaluated and show promising accuracy performance. With the confirmation of MTJ-based CRAM's accuracy, there is a strong case that this technology will have a significant impact on power- and energy-demanding applications of machine intelligence.

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data

In-Memory Direct Processing Based On Nanoscale Perpendicular Magnetic Tunnel Junctions

Boolean Logic Operations Based on Four-Terminal Magnetic Tunnel Junction for Computing in Memory

Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation

A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Advanced Nanoscale Magnetic Tunnel Junctions for Low Power Computing (Invited)

Parallel Matrix Multiplication Using Voltage Controlled Magnetic Anisotropy Domain Wall Logic

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

A Compact Model of Domain Wall Propagation for Logic and Memory Design

Efficient Magnetic Domain Nucleation and Domain Wall Motion with Voltage Control Magnetic Anisotropy Effect and Antiferromagnetic/Ferromagnetic Coupling

Nanoscale domain wall devices with magnetic tunnel junction read and write

Rectified Tunnel Magnetoresistance Device with High On/Off Ratio for In-Memory Computing

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges.

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Energy Efficient In-Memory Computing Platform Based on 4-Terminal Spin Hall Effect-Driven Domain Wall Motion Devices

All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device