Abstract:The explosive demands of storage capacity and the von Neumann bottleneck of modern computer architectures trigger many innovations in information technology. Amongst them, nonvolatile spintronics attract considerable attentions for which can embed the computation capability into memory, enable neuromorphic, and probabilistic computing. These exciting progresses typically rely on the manipulation of the relative magnetization orientations of two magnetic layers. By extending to 3D spintronic architectures made of multiple magnetic layers (n), the exponentially increased 2n magnetic states can provide ample opportunities for implementing novel spintronic functionalities. Here, through building perpendicularly magnetized 3D spin‐orbitronic architectures – [Pt/Fe1−xTbx/Si3N4]n multilayers, it is demonstrated the electrical programing of 2n memory states via current‐induced spin–orbit torques (SOTs), and the accompanied reconfigurable multifunction in‐memory logic features in a single four‐terminal Hall device. Further, an electrical readout of these 2n states, together with the implementation of Boolean logic gates and digital circuitry such as 2–4 and 3–8 decoders, are successfully conducted. More complex logic circuits are also envisioned. The experiments thus substantiate 3D spin‐orbitronic structures as a promising platform for exponentially boosting the storage capacity and accommodating in‐memory computing that can be important for promoting the emerging 3D nanospintronics.

Stateful Implication Logic Based on Perpendicular Magnetic Tunnel Junctions

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Magnetic Logic Based on Diode-Assisted Magnetoresistance

A Giant Magnetoimpedance Effect Based Nonvolatile Boolean Logic Gate

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Electrically Reconfigurable 3D Spin‐Orbitronics

Computing with spins and magnets

Current-driven Magnetic Domain-Wall Logic

Giant spin hall effect (GSHE) logic design for low power application

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Electrical-controllable antiferromagnet-based tunnel junction

Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions

Nonvolatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Nonvolatile magnetic half adder combined with memory writing

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

Magnetic Full Adder Based on Negative Differential Resistance-Enhanced Anomalous Hall Effect

Three-Dimensional Stateful Material Implication Logic

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Energy Efficient In-Memory Computing Platform Based on 4-Terminal Spin Hall Effect-Driven Domain Wall Motion Devices