Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

Stateful Reconfigurable Logic Via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory

Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Computing with spins and magnets

Electrically Reconfigurable 3D Spin‐Orbitronics

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

Robust and Programmable Logic-In-Memory Devices Exploiting Skyrmion Confinement and Channeling Using Local Energy Barriers

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Three-Dimensional Stateful Material Implication Logic

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Giant spin hall effect (GSHE) logic design for low power application

Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell.

Mesoscopic superconducting memory based on bistable magnetic textures