Abstract:Identifying atomic configurations of impurities in semiconductors is of fundamental interest and practical importance in designing electronic and optoelectronic devices. C impurity acting as one of the most common impurities in GaN, it is believed for a long time that it substitutes at Ga site forming C Ga with +1 charge-state in p -type GaN, while it substitutes at N site forming C N with -1 charge-state in n -type GaN. However, by combining x-ray absorption spectroscopy and first-principles simulations, we observed that C is mainly occupying the N site rather than the Ga one in p -GaN. We further reveal that this is due to an H-induced E F -tuning effect. During growth, the existing H can passivate Mg dopants and upshifts the E F to the upper region of bandgap, leading to the C N formation. After the p -type activation by annealing out H, although the E F is pushed back close to the valence band maximum, whereas the extremely large kinetic barrier can prevent the migration of C from the metastable C N site to ground-state C Ga site, hence stabilizing the C N configuration. Additionally, the C N with neutral charge-state ( CN0 ) in the p -GaN is further observed. Therefore, the real C-related hole-killer in p -type GaN could be C N rather than the commonly expected C Ga . Our work not only offers the unambiguous evidence for the C defect formation in p -GaN but also contributes significantly to an in-depth understanding of the C-related hole-killers and their critical role on electrical and optoelectrical properties of p -GaN and even p -AlGaN.

The residual C concentration control for low temperature growth p-type GaN*

Improvement of Ohmic Contact to P-Gan by Controlling the Residual Carbon Concentration in P(++) -Gan Layer

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Influence of Residual Carbon Impurities in a Heavily Mg-doped GaN Contact Layer on an Ohmic Contact

Influence of Carrier Gas H 2 Flow Rate on Quality of P-Type GaN Epilayer Grown and Annealed at Lower Temperatures

Effects of Thin Heavily Mg-Doped Gan Capping Layer on Ohmic Contact Formation of P-Type Gan

Effect of Growth Temperature on the Impurity Incorporation and Material Properties of N-Polar Gan Films Grown by Metal-Organic Chemical Vapor Deposition

Achievable Hole Concentration at Room Temperature As a Function of Mg Concentration for MOCVD-grown P-Gan after Sufficient Annealing

Conductivity Enhancement in AlGaN:Mg by Suppressing the Incorporation of Carbon Impurity

Study on Electrical Properties of N-Gan Grown at Low Temperature by Metal-Organic Vapor Phase Epitaxy

Investigation On The Compensation Effect Of Residual Carbon Impurities In Low Temperature Grown Mg Doped Gan Films

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Influence of Hydrogen Impurity on the Resistivity of Low Temperature Grown P-Alxga1-xn Layer (0.08 ≤ X ≤ 0.104)

Influence of Substrate Misorientation on Carbon Impurity Incorporation and Electrical Properties of P-Gan Grown by Metalorganic Chemical Vapor Deposition

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance–voltage measurement

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition