Thickness- and Temperature-Dependent Structural and Electromechanical Properties of (100)-Oriented Sc-doped (na0.85k0.15)0.5bi0.5tio3 Ferroelectric Films

Yunyi Wu,Yonghong Hu,Xiaohui Wang,Caifu Zhong,Longtu Li

DOI: https://doi.org/10.1039/c7ra07848j

IF: 4.036

2017-01-01

RSC Advances

Abstract:NKBT-Sc film thickness- and LNO layer insertion mode-dependent structural and electromechanical properties of the composite films were investigated.

What problem does this paper attempt to address?

Temperature- and Frequency-Dependent Dielectric Response and Energy-Storage Performance in High (100)-Oriented Sc Doped (na0.85k0.15)0.5bi0.5tio3 Films

Yunyi Wu,Yonghong Hu,Xiaohui Wang,Caifu Zhong,Longtu Li

DOI: https://doi.org/10.1039/c7ra10068j

IF: 4.036

2017-01-01

RSC Advances

Abstract:Highly (100)-oriented (Na0.85K0.15)0.5Bi0.5Ti0.75Sc0.25O3 (NKBT-Sc) films with thicknesses ranging from about 460 to 860 nm were grown by utilizing TiO2 layers engineering.
Effect of Sc Doping on the Structure and Electrical Properties of (na0.85k0.15)(0.5)bi0.5tio3 Thin Films Prepared by Sol-Gel Processing

Yunyi Wu,Xiaohui Wang,Longtu Li

DOI: https://doi.org/10.1111/j.1551-2916.2011.04428.x

IF: 4.186

2011-01-01

Journal of the American Ceramic Society

Abstract:(Na0.85K0.15)(0.5)Bi0.5TiO3 (NKBT) and B-site-substituted NKBT by Sc, i.e. (Na0.85K0.15)(0.5)Bi0.5Ti(1-x)ScxO3 (NKBT-Scx, x = 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, and 0.4) thin films were prepared on Pt/Ti/SiO2/Si(100) substrates by an aqueous sol-gel method. Structures and electrical characteristics of the films were studied as functions of Sc composition. Structures were investigated by X-ray diffraction (XRD), scanning probe microscopy, scanning electron microscopy, and Raman spectroscopy. XRD indicates that a secondary phase peak appears when Sc-doping concentration increases above x = 0.25 due to the limited substitution tolerance of Sc3+ for Ti4+. With increasing Sc-doping composition, generally, the octahedra-related vibration modes show a high-frequency shift. The remnant polarization (P-r) value is a maximum for the NKBT-Sc0.25 films of 18.62 mu C/cm(2) and decreases with both decreasing and increasing doping concentration. The NKBT-Sc thin film with an optimized Sc-doping concentration of x = 0.25 shows the effective piezoelectric coefficient d*(33) of 67 pm/V. The Curie temperature (T-c) of the NKBT thin film shifted to higher temperature by adding Sc dopant.
Growth Orientation-Related Enhancement of Electrical Properties in (Na0.85k0.15)0.5bi0.5tio3-Based Composite Films

Yunyi Wu,Xiaohui Wang,Wenhan Cui,Yonghong Hu,Longtu Li

DOI: https://doi.org/10.1016/j.jeurceramsoc.2018.09.035

IF: 5.7

2019-01-01

Journal of the European Ceramic Society

Abstract:TiO2-coated (Na0.85K0.15)(0.5)Bi0.5TiO3 (NKBT) composite films with thicknesses of 250 nm and 650 nm are synthesized on Pt(111)/Ti/SiO2/Si using an aqueous sol-gel method. X-ray diffraction (XRD) in omega-scan and psi-scan modes is performed to study the crystal orientation of the films. The electrical properties of the TiO2-coated NKBT composite films are investigated over a temperature range from -150 degrees C to 150 degrees C. Compared to films without the TiO2 layer, the TiO2-coated NKBT films exhibit enhanced electrical properties, higher temperature stability, and better endurance performance, which can be ascribed to the combined effects of the highly (100)-preferred orientation and improved degree of crystallization. The composite film in which TiO2 layers are attached on both sides of the 650 nm-thick NKBT film demonstrates the best ferroelectric performance with the highest remnant polarization (P-r) of 24.2( +/- 1.2) mu C/cm(2) under 750 kV/cm, the best piezoelectric performance with the highest effective piezoelectric constant (d(33)*) of 82( +/- 4) pm/V, and the best electric performance with the lowest leakage current density of 4.5 x 10(-6)( +/- 0.4 x 10(-6)) A/cm(2) at 20 V. Piezoresponse force microscopy (PFM) further confirms the enhanced ferroelectricity and domain switching of the TiO2 -coated composite films on a microscopic scale. In addition, the P-r values of the films increase gradually as the temperature decreases from 150 degrees C to-150 degrees C, while the d(33)* values exhibit the opposite trend, which is mainly attributed to the suppressed mobility of the domain walls at low temperatures.
Structure and Electrical Properties of Na 0.5 Bi 0.5 TiO 3 Ferroelectric Thick Films Derived from a Polymer Modified Sol-Gel Method

Hongfen Ji,Wei Ren,Lingyan Wang,Peng Shi,Xiaofeng Chen,Xiaoqing Wu,Xi Yao,Sien-Ting Lau,Qifa Zhou,K. Kirk Shung

DOI: https://doi.org/10.1109/tuffc.2011.2054

2011-01-01

Abstract:Lead-free Na0.5Bi0.5TiO3 (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500 degrees C to 750 degrees C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 mu m, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness.
The Electrical Properties of Epitaxial Grown Sc-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Film Prepared by Sol-Gel Method

Yun Yi Wu,Xiao Hui Wang,Cai Fu Zhong,Longtu Li

DOI: https://doi.org/10.4028/www.scientific.net/KEM.697.235

2016-01-01

Key Engineering Materials

Abstract:Sc-doped (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO3 [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 μC/cm2 and typical butterfly shape displacement–voltage loop with effective piezoelectric coefficient d33* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.
Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method

Caifu Zhong,Zhenya Lu,Xiaohui Wang,Longtu Li

DOI: https://doi.org/10.1007/s10854-015-3338-z

2015-01-01

Journal of Materials Science Materials in Electronics

Abstract:Structure and electric properties of the sol-gel derived 0.45BiSc(1/2)Fe(1/2)O(3)-0.55PbTiO(3) (BFS-PT) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates with LaNiO3 buffer layers are investigated. Highly (100)-oriented BFS-PT thin films with thickness ranging from 200 to 600 nm were synthesized by introducing LaNiO3 buffer layers. The as-deposited BFS-PT films showed enhanced dielectric and piezoelectric properties, the dielectric constant and effective piezoelectric coefficient was approximate 1820 and 110 pm/V respectively for film of 600 nm, which was comparable to that of BiScO3-PbTiO3 or PZT thin films. The thickness dependence of the dielectric, ferroelectric and piezoelectric properties was discussed. Besides, the direct current conduction mechanism of the films was investigated as well, indicating that bulk limited Poole-Frenkel emission was observed to dominate the leakage current in the high electric field.
Microstructure and Electric Properties of (na0.85k0.15)(0.5)bi0.5tio3 Composited Films with Alternative Tio2 Layers

Yunyi Wu,Xiaohui Wang,Caifu Zhong,Longtu Li

DOI: https://doi.org/10.1111/jace.14910

IF: 4.186

2017-01-01

Journal of the American Ceramic Society

Abstract:In this work, in order to investigate the effect of TiO2 layer on the microstructure and piezoelectric properties of (Na0.85K0.15)(0.5)Bi0.5TiO3 (NKBT) thin films, TiO2 layer was inserted at the interface between the NKBT thin film and substrate and on both sides of the NKBT, i.e., at the interface and on the top of the NKBT thin film. NKBT composited films with alternative TiO2 layer were deposited on Pt/Ti/SiO2/Si substrate by aqueous sol-gel method. X-ray diffraction observation found that the degree of (100) preferred orientation strengthened with TiO2 layers added, especially on both sides of NKBT thin film. The TiO2/NKBT/TiO2 composited film with both TiO2 layer of 40nm thickness exhibited a remnant polarization value P-r of 22.6c/cm(3) and effective piezoelectric coefficient d*(33) of approximate 77pm/V, which are much larger than that of the single-layered NKBT thin film with P-r value of 13.7 c/cm(3) and d*(33) of 56pm/V, respectively. According to the investigation of the temperature-dependent ferroelectric property, it was found that the P-r gradually increased, and in the meantime the coercive voltage gradually moved to higher voltage with testing temperature varied from 20 to -150 degrees C. Besides, applied voltage dependence of leakage current density measurement indicated that the TiO2 layer would effectively lower the leakage current of the films, and the TiO2/NKBT/TiO2 composited film both TiO2 layer of 40nm exhibited the lowest leakage current.
Enhanced structures and electrical properties of lead-free K 0.5Na0.5NbO3-Bi0.5Na 0.5TiO3 0-3 composite ferroelectricthick films

HongFen Ji,Wei Ren,Lingyan Wang,Peng Shi,Xiaofeng Chen,Xiaoqing Wu,Xi Yao,SienTing Lau,Qifa Zhou,Koping Kirk Shung

DOI: https://doi.org/10.1111/j.1551-2916.2011.04524.x

IF: 4.186

2011-01-01

Journal of the American Ceramic Society

Abstract:Lead-free K0.5Na0.5NbO3-Bi0.5Na0.5TiO3 (KNN-BNT) 0-3 composite ferroelectric thick films have been successfully prepared by a modified composite sol-gel process. The KNN fine ceramic powders were dispersed in the BNT precursor solution to form the uniform slurry that was spin coated on (111) Pt/TiO2/SiO2/Si substrates. The buffer layers and vacuum infiltration were used during the deposition process to improve the structure and density of the composite films. Influence of the annealing temperature and weight ratio of the powder-to-solution on the structures and electrical properties of KNN-BNT composite thick films has been investigated. X-ray diffraction analysis indicates that the composite thick films possess pure perovskite structures composed by KNN and BNT phases. The dielectric constant and remnant polarization of the composite thick films increase with increasing annealing temperature and decreasing powder-to-solution weight ratio due to reduction of pores and improvement of film density. The composite thick films with the powder-to-solution weight ratio of 0.40 and annealed at 750 degrees C have a dielectric constant of 848 and a remnant polarization of 23.6 mu C/cm(2). The KNN-BNT composite thick films obtained are a promising candidate for transducer applications.
The Electrical Properties of Epitaxial Grown Sc-Doped (na0.85k0.15)0.5bi0.5tio3 Thin Film Prepared by Sol-Gel Method

Yun Wu,Xiao Hui Wang,Cai Fu Zhong,Long Tu Li

DOI: https://doi.org/10.4028/www.scientific.net/kem.697.235

2016-01-01

Key Engineering Materials

Abstract:Sc-doped (Na 0. 8 5 K 0.15 ) 0.5 Bi 0.5 TiO 3 (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO 3 [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 μC/cm 2 and typical butterfly shape displacement–voltage loop with effective piezoelectric coefficient d 33 * of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.
Investigation of Thickness Dependence of Structure and Electric Properties of Sol-Gel-Derived BiScO3-PbTiO3 Thin Films: Investigation of Properties of BiScO3-PbTiO3 Thin Films

Caifu Zhong,Xiaohui Wang,Jian Fang,Longtu Li

DOI: https://doi.org/10.1111/j.1551-2916.2010.03850.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:BiScO3-PbTiO3 (BSPT) thin films with the thickness from 80 to 800 nm were fabricated via a sol-gel method on Pt(111)/Ti/SiO2/Si(001) substrates, and the effects of thickness on the structure and properties of the sol-gel-derived BSPT thin films were investigated. All the films with different thickness showed similar random orientation and similar grain size. The dependence of dielectric and ferroelectric properties on film thickness and temperature from room temperature to -190 degrees C were investigated, and the results were explained by comparing our experiment data with the existing experimental and theoretical models. It is found that the interface between the electrode and the film has a twofold deleterious effect on permittivity: firstly, a passive layer exists, secondly this layer pins domain walls, and thus the larger dielectric response in thicker films and at higher temperatures come from the higher mobility of domain wall motion. Piezoelectric properties dependence of the BSPT films on thickness were also investigated, the effective piezoelectric constant d(33)* increased from 35 pm/V for the film of 80-nm-thick to 80 pm/V of 800-nm-thick film.
Enhancement of Piezoelectric and Ferroelectric Performances in (na0.85k0.15)0.5bi0.5tio3 Films with BaTiO3 Interlayers

Yunyi Wu,Xiaohui Wang,Caifu Zhong,Longtu Li

DOI: https://doi.org/10.1016/j.jeurceramsoc.2017.11.013

IF: 5.7

2017-01-01

Journal of the European Ceramic Society

Abstract:In this work, in order to optimize the electrical performance of (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) thin films, 20 nm-thick BaTiO3 (BTO) layer was utilized by deliberately coating in the NKBT film-substrate interface or in the NKBT film, i.e., BTO layers coated in sequence with NBKT layers. The BTO layer, especial coated in the NKBT film, was beneficial for crystallization process and more preferable to form a denser film morphology. The BTO-coated NKBT composite films exhibited much enhancement in electrical properties compared to the films without BTO layer. Accordingly, a high effective piezoelectric coefficient d33* of 75pm/V and remnant polarization Pr of 22.1μC/cm2, as well as a low leakage current density of 1.2×10−5A/cm2 were obtained in the 460 nm-thick composite film with BTO layers coated in the NBKT film. It meant that this kind of BTO-coated NKBT composite film could perform as a potential candidate for the lead-free piezoelectric applications. The observed enhancement in the electrical properties with the introduction of BTO layer could be mainly explained by the weakened influence of domain pinning in the film-electrode interface and grain boundaries due to the decreased strain in the film-electrode interface and better crystallinity in the highly (110)-oriented NKBT films, thereby enhancing motion of domain-walls.
Thickness Effect on Ferroelectric Domain Formation in Compressively Strained K0.65Na0.35NbO3 Epitaxial Films

Yankun Wang,Saud Bin Anooz,Gang Niu,Martin Schmidbauer,Lingyan Wang,Wei Ren,Jutta Schwarzkopf

DOI: https://doi.org/10.1103/physrevmaterials.6.084413

IF: 3.98

2022-01-01

Physical Review Materials

Abstract:In this paper, the influence of thickness in epitaxial K0.65Na0.35NbO3 ferroelectric thin films grown on a (110) TbScO3 substrate was systematically studied. Detailed atomic force microscopy revealed a complex change in growth mode with increasing film thickness, with the surface roughness remaining <0.30 nm throughout. By combining piezoresponse force microscopy and high-resolution x-ray diffraction, the occurrence of 90 degrees stripe domains was demonstrated for the films with a thickness of >= 11 nm, while the domain periodicity is in good agreement with Kittel's law. Furthermore, up to the thickness of 93 nm, elastic strain relaxation induced by the formation of ferroelectric domains was observed, whereas plastic strain relaxation plays only a minor role. As the film thickness increases, three successive phases of ferroelectric domains were observed: (i) irregularly arranged orthorhombic c domains in the thinnest film, (ii) periodically arranged 90 degrees monoclinic M-C domains up to a thickness of 25 nm, and (iii) a flux closure vortexlike structure in thicker films to achieve the lowest equilibrium energy. These results demonstrate the importance of understanding the lattice relaxation mechanism for intentional tuning of ferroelectric thin film properties.
Thickness-Dependent Structural And Magnetic Properties Of Bifeo3 Films Prepared By Metal Organic Decomposition Method

Fengzhen Huang,Xiaomei Lü,Weiwei Lin,Yi Kan,Junting Zhang,Qingdong Chen,Zhe Wang,Liben Li,Jinsong Zhu

DOI: https://doi.org/10.1063/1.3519986

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Perovskite BiFeO3 films with various thicknesses were prepared on Pt/Ti/SiO2/Si substrates by metal organic decomposition method. It was found that, with the film thickness increasing from 35 to 120 nm, the grain and ferroelectric domain size slightly increased, while the saturation magnetization M-s abruptly decreased. For the further increase of film thickness, M-s decreased slowly and the magnetization of unit area exhibited a fluctuation behavior. Moreover, the magnetic anisotropy degenerated with the increase of film thickness. The possible causes for the thickness effects were discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519986]
Low Temperature Preparation and Electric Properties of Highly (100)-Oriented (na0.85k0.15)0.5bi0.5tio3 Thin Films Prepared by a Sol–gel Route

Q. G. Chi,Y. Cui,Y. Chen,J. Q. Lin,X. Wang,Q. Q. Lei

DOI: https://doi.org/10.1016/j.ceramint.2015.10.050

IF: 5.532

2016-01-01

Ceramics International

Abstract:Lead-free (Na0.85K0.15)0.5Bi0.5TiO3 thin films with different spin-coating layers were fabricated by a sol–gel process using a 15nm-thick Pb0.8La0.1Ca0.1Ti0.975O3 seed layer. The phase composition and electrical properties of the thin films were investigated in detail. X-ray diffraction analysis indicated that low-temperature growth of (Na0.85K0.15)0.5Bi0.5TiO3 thin films—as low as 500°C—was successfully achieved. The films, comprising six layers, featured both rhombohedra and tetragonal phases near the morphotropic phase boundary. In contrast, the films fabricated with 9 and 12 layers consisted of single phase only. Additionally, a slow interfacial diffusion was achieved, owing to the low crystallization temperature. The six-layer thin film that crystallized at a low temperature exhibited enhanced electrical properties when the external electric field was small, which was attributed to the co-existence of multiple phases and an unhindered interface.
Thickness-dependent ferroelectric and magnetic properties of BiFeO_3 films

Wang Zhi-Jun,Huang Feng-Zhen,Du Ying-Chao,Jin Ya-Ming,Zhu Jin-Song

2012-01-01

Abstract:Room temperature multiferroic BiFeO3 material has recently become the focus of research for its potential applications in multifunctional devices.It is meaningful to systematically investigate the thickness-dependent properties of BiFeO3 films since the polarization of ferroelectrics have been reported to be size-dependent and the special cycloidal spin structure with a period of 62 nm could bring about additional complexity to BiFeO3.BiFeO3 films with various thicknesses are prepared on Si substrates by metal organic decomposition method.The microstructure,ferroelectricity and magnetism of the films are investigated by X-ray diffraction,the piezoresponse force microscope,and superconducting quantum interference device,respectively.It is found that the polycrystalline films exhibit ferroelectric properties even with thickness as low as 30 nm.The grain size increases rapidly first with the film thickness increasing from 30 nm to 120 nm,and then increases slowly.Similarly,the ferroelectric domain size also increases with increasing film thickness,which implies the probable enhancement of the ferroelectric polarization.The single-domain state is predominant for the grains with size about 47-104 nm,while multi-domain state can be found for larger grains.Moreover,the ferroelectric domain can be switched by voltages applied through the probe of piezoresponse force microscope.The magnetism of BiFeO3 also shows thickness dependence.The saturation magnetization MS decreases abruptly with the film thickness increasing up to 120 nm,and then it decreases much slower,which could be attributed to the variation of surface-to-volume ratio.
Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

Qi Yu,jingfeng li,Wei Sun

DOI: https://doi.org/10.1016/j.apsusc.2012.11.006

IF: 6.7

2013-01-01

Applied Surface Science

Abstract:2% Nb-doped [1 1 1]-oriented lead zirconate titanate films (PNZT) of different Zr/Ti ratios ranging from 30/70 to 70/30 with a fixed thickness were deposited on the Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel method. The orientation degree, film morphology and phase transition of the PNZT films were investigated as a function of Zr/Ti ratios. The experimental results verified the composition-dependent phase transition from tetragonal to rhombohedral of the PNZT films with a visible [1 1 1] preferred orientation. To obtain high performance by making use of rhombohedrel [1 1 1]-oriented thin films, Pb(Zr0.6Ti0.4)Nb0.02O3 films with various thicknesses varying from 70 nm to 300 nm were studied to reveal the relationship among the film thickness, stress and ferroelectric response. It was found that ferroelectric property reached a high remnant polarization (Pr) of 61.7 μC/cm2 and a minimum coercive field (Ec) of 70.7 kV/cm at 300 nm due to the release of residual tensile stress. © 2012 Elsevier B.V. All rights reserved.
SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

Huiting Sui,Huajun Sun,Xiaofang Liu,Shanshan Guo,Huan Yang,Renxin Xu

DOI: https://doi.org/10.1142/s0218625x18501664

2019-01-01

Surface Review and Letters

Abstract:BiFe[Formula: see text]CrxO3 ([Formula: see text]BFCO, [Formula: see text], 0.02, 0.03, 0.04, 0.05) thin films were successfully fabricated onto Pt(111)/TiO2/SiO2/Si substrate via a solgel process. The correlation between microstructure and insulating, ferroelectric properties of [Formula: see text]BFCO thin films are investigated. The leakage behavior for all the thin films is in accordance with the Ohmic conduction and FN Tunneling emission during low and high electric field region, respectively. Compared with the pure BFO, all the thin films with Cr[Formula: see text] doping possess reduced leakage current density by 1–2 orders of magnitude, with the lowest value approximately 10[Formula: see text] at 200[Formula: see text]kV/cm. Moreover, the 0.04BFCO thin film exhibits the maximum remanent polarization ([Formula: see text]) value of 29.8[Formula: see text][Formula: see text]C/cm2 with a great fatigue behavior, which could be ascribed to the absence of impurity phase and reduced leakage current.
Investigation Of Thickness Dependence Of Structure And Electric Properties Of Sol-Gel-Derived Bisco3-Pbtio3 Thin Films

Caifu Zhong,Xiaohui Wang,Jian Fang,Longtu Li

DOI: https://doi.org/10.1111/j.1551-2916.2010.03850.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:BiScO3-PbTiO3 (BSPT) thin films with the thickness from 80 to 800 nm were fabricated via a sol-gel method on Pt(111)/Ti/SiO2/Si(001) substrates, and the effects of thickness on the structure and properties of the sol-gel-derived BSPT thin films were investigated. All the films with different thickness showed similar random orientation and similar grain size. The dependence of dielectric and ferroelectric properties on film thickness and temperature from room temperature to -190 degrees C were investigated, and the results were explained by comparing our experiment data with the existing experimental and theoretical models. It is found that the interface between the electrode and the film has a twofold deleterious effect on permittivity: firstly, a passive layer exists, secondly this layer pins domain walls, and thus the larger dielectric response in thicker films and at higher temperatures come from the higher mobility of domain wall motion. Piezoelectric properties dependence of the BSPT films on thickness were also investigated, the effective piezoelectric constant d(33)* increased from 35 pm/V for the film of 80-nm-thick to 80 pm/V of 800-nm-thick film.
Impedance Spectroscopy and Electrical Conductivity of 0.7Bi(1-X)ndxfeo3-0.3batio3 Ferroelectric Ceramics

Hui Tang,Xiao-Cao Peng,Jiu-Ming Ma,Zhi-Peng Yang,Xiang Niu,Jun-Xia Wen,Xin-Gui Tang,Sheng-Guo Lu

DOI: https://doi.org/10.1142/s2010135x24500140

2024-01-01

Journal of Advanced Dielectrics

Abstract:0.7Bi((1-x))Nd(x)FeO(3)-0.3BaTiO(3) (BNFO-BTO, x=0.005, 0.010, 0.020 and 0.050) ceramics were fabricated using the high-temperature solid-state reaction method. The X-ray diffraction (XRD) patterns revealed that the primary phase in these ceramics was pseudocubic. The Scanning Electron Microscopy (SEM) micrographs exhibited dense microstructures throughout all BNFO-BTO ceramics. Furthermore, the temperature dependence of dielectric behaviors and ferroelectric hysteresis loop shapes suggested the occurrence of a relaxor ferroelectric-type phase transition in BNFO-BTO ceramics. Additionally, the frequency dispersion characteristics and remnant polarization were enhanced with increasing substitution of Bi3+ by Nd3+. Conducted impedance analysis on 0.7Bi((1-x))Nd(x)FeO(3)-0.3BaTiO(3) ceramics and two dielectric responses of the grain at high frequency and grain boundary at low frequency were illustrated, respectively. The combination of imaginary impedance (Z '') and imaginary modulus (M '') versus logf plots revealed that the charge carriers' motion was not entirely long-range, short-range migration also exists. Through calculations based on Curie-Weiss Law, the relaxation activation energy (Ea) and conductance activation energy (Ec) were investigated, confirming that doping Nd3+ effectively mitigates the concentration of oxygen vacancies (OVs) and prevents the formation of oxygen vacancies clusters, ultimately suppressing conductivity in BNFO-BTO ceramics.
Structure and Electrical Properties of Bi0.5Na0.5TiO30-3 Composite Lead-Free Thick Films

Jinyan Zhao,Wei Ren,Hongfen Ji,Lingyan Wang,Xiaoqing Wu,Peng Shi

DOI: https://doi.org/10.1080/00150193.2014.893167

2014-01-01

Ferroelectrics

Abstract:The use of piezoelectric films in high-frequency ultrasonic transducers requires thick, dense, and crack-free films with excellent piezoelectric properties. In this work, Bi0.5Na0.5TiO3 (abbreviated to BNT) 0-3 composite lead-free ferroelectric thick films have been successfully prepared by a modified 0-3 composite technique. The BNT fine ceramic powders were dispersed in a sol-gel solution of the same composition to form a uniform slurry, which was deposited on (111) Pt/TiO2/SiO2/Si substrates using spin-coating and then annealed at 700°C. The morphology, microstructure, dielectric properties, ferroelectric properties and leakage current densities of BNT composite thick films have been investigated. BNT ceramic powders sintered at a series of temperatures were used to prepare the thick films. X-ray diffraction analysis indicates that the BNT 0-3 composite thick films exhibit a pure perovskite structure. The electrical properties of the composite films depend strongly on the sintering temperature of BNT ceramic powders.

Thickness- and Temperature-Dependent Structural and Electromechanical Properties of (100)-Oriented Sc-doped (na0.85k0.15)0.5bi0.5tio3 Ferroelectric Films

Temperature- and Frequency-Dependent Dielectric Response and Energy-Storage Performance in High (100)-Oriented Sc Doped (na0.85k0.15)0.5bi0.5tio3 Films

Effect of Sc Doping on the Structure and Electrical Properties of (na0.85k0.15)(0.5)bi0.5tio3 Thin Films Prepared by Sol-Gel Processing

Growth Orientation-Related Enhancement of Electrical Properties in (Na0.85k0.15)0.5bi0.5tio3-Based Composite Films

Structure and Electrical Properties of Na 0.5 Bi 0.5 TiO 3 Ferroelectric Thick Films Derived from a Polymer Modified Sol-Gel Method

The Electrical Properties of Epitaxial Grown Sc-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Film Prepared by Sol-Gel Method

Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method

Microstructure and Electric Properties of (na0.85k0.15)(0.5)bi0.5tio3 Composited Films with Alternative Tio2 Layers

Enhanced structures and electrical properties of lead-free K 0.5Na0.5NbO3-Bi0.5Na 0.5TiO3 0-3 composite ferroelectricthick films

The Electrical Properties of Epitaxial Grown Sc-Doped (na&lt;sub&gt;0.&lt;/sub&gt;&lt;sub&gt;8&lt;/sub&gt;&lt;sub&gt;5&lt;/sub&gt;k&lt;sub&gt;0.15&lt;/sub&gt;)&lt;sub&gt;0.5&lt;/sub&gt;bi&lt;sub&gt;0.5&lt;/sub&gt;tio&lt;sub&gt;3&lt;/sub&gt; Thin Film Prepared by Sol-Gel Method

Investigation of Thickness Dependence of Structure and Electric Properties of Sol-Gel-Derived BiScO3-PbTiO3 Thin Films: Investigation of Properties of BiScO3-PbTiO3 Thin Films

Enhancement of Piezoelectric and Ferroelectric Performances in (na0.85k0.15)0.5bi0.5tio3 Films with BaTiO3 Interlayers

Thickness Effect on Ferroelectric Domain Formation in Compressively Strained K0.65Na0.35NbO3 Epitaxial Films

Thickness-Dependent Structural And Magnetic Properties Of Bifeo3 Films Prepared By Metal Organic Decomposition Method

Low Temperature Preparation and Electric Properties of Highly (100)-Oriented (na0.85k0.15)0.5bi0.5tio3 Thin Films Prepared by a Sol–gel Route

Thickness-dependent ferroelectric and magnetic properties of BiFeO_3 films

Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films

SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

Investigation Of Thickness Dependence Of Structure And Electric Properties Of Sol-Gel-Derived Bisco3-Pbtio3 Thin Films

Impedance Spectroscopy and Electrical Conductivity of 0.7Bi(1-X)ndxfeo3-0.3batio3 Ferroelectric Ceramics

Structure and Electrical Properties of Bi0.5Na0.5TiO30-3 Composite Lead-Free Thick Films

The Electrical Properties of Epitaxial Grown Sc-Doped (na<sub>0.</sub><sub>8</sub><sub>5</sub>k<sub>0.15</sub>)<sub>0.5</sub>bi<sub>0.5</sub>tio<sub>3</sub> Thin Film Prepared by Sol-Gel Method