Round‐robin Test for the Measurement of Layer Thickness of Multilayer Films by Secondary Ion Mass Spectrometry Depth Profiling

Kyung Joong Kim,Jong Shik Jang,Joe Bennett,David Simons,Mario Barozzi,Akio Takano,Zhanping Li,Charles Magee
DOI: https://doi.org/10.1002/sia.6277
2017-01-01
Surface and Interface Analysis
Abstract:An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si52.4Ge47.6) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.
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