Abstract:Lithography is a top-down technology to produce sub-micrometer feature sizes for the fundamental research and widespread applications. The conventional optical lithography has been developed to not only make the tiny electronic devices to form the basic circuits in today’s computer chips, but also fabricate micro/nano electromechanical systems (MEMS/NEMS). However, the conventional photolithographic techniques have now reached their ultimate spatial resolution because of both the light diffraction and the photoresist restrictions [1]. Alternative techniques for traditional photolithography have been proposed and developed to meet the requirements of a high spatial resolution of sub100 nm as well as the capability to fabricate an arbitrary structure and achieve mass production [1-10]. Research teams around the word have been investigating alternative techniques including extreme ultraviolet lithography, electron and ion beam lithography, Xray lithography and atom lithography. Each technique has its own advantages and disadvantages, and no one yet knows which one will be the method of choice for the next generation lithography (NGL). The arrays of microand nanostructures fabricated on silicon substrates have now attracted more attention for its interesting characteristics in applications such as photonics, electronics, optoelectronics and sensing [11-15]. The array properties can be tuned further by varying the geometry, the doping, the periodicity, and the size of the microand nanostructures [11,12]. These controllable and elaborate arrays are commonly fabricated by conventional optical lithography, X-ray lithography, electron-beam or ion-beam lithography [1,16-18]. Unfortunately, there are inherent limitations to pattern over large areas at nanoscale using these lithographical techniques due to the light diffraction, the long-range inter-particle interactions and the proximity effects. To overcome these limitations, it’s necessary to develop new alternative techniques with a shorter wavelength and a thinner resist for traditional optical lithography. Among the alternative techniques for traditional photolithography, atom lithography based on metastable atoms beam (MAB) and self-assembled monolayers (SAMs) has shown significant potential in fabricating arrays of microand nanostructures, which is a major goal in nanoscience and nanotechnology [10,19-29]. Metastable atom is one of the atom’s electron is

Time of Flight – Secondary Ion Mass Spectroscopy Profiling of Self-Assembled Monolayer Patterns Based on Vapor Deposition Technique

Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS) Profiling of Self Assembled Monolayer (SAM) Patterns Based on Vapor Deposition Technique

Surface Analysis of Photolithographic Patterns Using Tof-Sims and Pca

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Depth Profiling of Nanometer Coatings by Low Temperature Plasma Probe Combined with Inductively Coupled Plasma Mass Spectrometry.

In situ differential atomic force microscopy (AFM) measurement for ultra-thin Thiol SAM patterns by area-selective deposition technique

High Sensitivity of Fluorine Gas-Assisted FIB-TOF-SIMS for Chemical Characterization of Buried Sublayers in Thin Films

Atom Lithography: Fabricating Arrays of Silicon Microstructures Using Self-Assembled Monolayer Resist and Metastable Helium Beam

Selective Functionalization of Silicon Surface Controlled by Metastable Helium Atom Beam for Patterning Chemisorbed Monolayer Molecular Assemblies

Deep Investigation of Two-Dimensional Structure Arrays Formed on Si Surface

Growth Mechanisms of Fluoroalkyltrlchlorosilane Self-Assembled Monolayers on the Magnetic Head Surface

Area-selective Deposition of Self-Assembled Monolayers on a Synchrotron Radiation Etching Pattern

Time‐of‐flight secondary ion mass spectrometry and X‐ray photoelectron spectroscopy protocol for the analysis of organic multilayers

The Improved Self-assembled Monolayer of Octadecyltrichlorosilane As Positive Resist for Patterning Silicon Surface by Metastable Helium Atom Beam Lithography

Electrical Characterisation of Ultra-thin SAM Structures

Element-specific, non-destructive profiling of layered heterostructures

Photopatterning of self-assembled monolayers at 244 nm and applications to the fabrication of functional microstructures and nanostructures

Etching-free Patterning Method for Electrical Characterization of Atomically Thin MoSe2 Films Grown by Chemical Vapor Deposition.

Metastable helium atom beam lithography with octadecyltrichlorosilane self-assembled monolayer resister grown directly on silicon surface

A Three-Dimensional Microfabrication Technology on Highly Structured Surfaces

Laser Thinning and Patterning of MoS2 with Layer-by-Layer Precision