Tuning the Fluorescence Intensity and Stability of Porous Silicon Nanowires Via Mild Thermal Oxidation

Lu Gan,Haiping He,Qianqian Yu,Zhizhen Ye

DOI: https://doi.org/10.1039/c7ra05012g

IF: 4.036

2017-01-01

RSC Advances

Abstract:Porous Si nanowires show anomalous luminescence quenching and improved sensing stability upon mild thermal oxidation.

What problem does this paper attempt to address?

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Zhao-Jun Mo,Zhi-Hong Hao,Hai-Zhen Wu,Qing Yang,Ping Zhuo,Hui Yang,Jian-Ping Xu,Xiao-Song Zhang,Lan Li

DOI: https://doi.org/10.1016/j.jlumin.2016.02.010

IF: 3.6

2016-01-01

Journal of Luminescence

Abstract:ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545nm) to yellow (580nm) and blue-shifts from yellow (580nm) to green (520nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520nm and 583nm) of as-growth, which suggest that the visible emission band (545nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zni defects compound with holes of VZn, Oi and OZn levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.
Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Jianguo Lv,Wenhao Wang,Min Zhao,Weili Zhu,Yuebing Cheng,Gang He,Miao Zhang,Xiaoshuang Chen,Zhaoqi Sun

DOI: https://doi.org/10.1007/s10854-016-6019-7

2017-01-01

Journal of Materials Science Materials in Electronics

Abstract:ZnO thin films were synthesized by a facile electrodeposition method in the aqueous solution. Porous ZnO thin films with wurtzite structure could be achieved by mean of annealing treatment. The growth mechanism of the porous ZnO thin film was discussed. The intensity of the E 2 mode in the ZnO thin film, which represents crystalline quality of the thin film increases with the increasing of annealing temperature. Optical properties indicate that annealing temperature has strong effect on the optical band gap value and defect concentrations. Both the green and yellow emissions corresponding to respective oxygen vacancies and oxygen interstitials can be identified. The results show that ZnO annealed at 400 °C exhibits a significant photocurrent density enhancement which is about 18 times larger than that of the as-deposited ZnO thin films. The mechanism of the enhanced photoresponse for the ZnO thin film has been discussed in detail.
Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation.

Lu Gan,Haiping He,Luwei Sun,Zhizhen Ye

DOI: https://doi.org/10.1039/c3cp53952k

IF: 3.3

2014-01-01

Physical Chemistry Chemical Physics

Abstract:Core-shell structured silicon nanowires (Si NWs) were obtained by coating Si NWs with an HfO2 layer. Enhanced photoluminescence (PL) and a slightly decreased PL lifetime are achieved by HfO2 coating. Furthermore, the sensing stability is strongly improved. The improvement of PL properties is interpreted in terms of surface passivation and the Purcell effect.
Improving the stability of porous silicon photoluminescence by damp oxidation

Huajie Chen,Fulong Zhang,HongLei Fan,Xiying Chen,Daming Huang,MingRen Yu,Xiaoyuan Hou,Gubo Li

1996-01-01

Abstract:The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3),SiH(SiO2) and SiH2(O2) structure.
Synthesis and characterization of Thermally Oxidized Porous Silicon/Zinc Oxide biochip substrates with high stability and fluorescence enhancement properties

Jiayu Chen,Liyuan Zhang,Runzhong Yu

DOI: https://doi.org/10.1016/j.matchemphys.2024.129058

IF: 4.778

2024-04-01

Materials Chemistry and Physics

Abstract:In this work, a stable, simple, and efficient Thermally Oxidized Porous Silicon/Zinc Oxide biochip substrate was fabricated based on the advantages of porous silicon substrate and Zinc Oxide nanomaterials. It was also investigated as an efficient substrate for enhanced fluorescence performance in detecting toxins. Porous Silicon was prepared by electrochemical anodic corrosion method, and the optimum preparation conditions of Porous Silicon were explored to be current density of 80 mA/cm2 and time of 20 min. Porosity, corrosion layer thickness and surface morphology of Porous Silicon were analyzed using gravimetric analysis and SEM. The fresh Porous Silicon was modified by combining with thermal oxidation method. The stability and optical properties of Thermally Oxidized Porous Silicon and fresh Porous Silicon were compared using Fourier transform infrared spectroscopy and Fiber optic spectroscopy. The reasons for the enhanced stability and optical properties were explored. Then the impregnation lift-off method was used to form oval shaped Zinc Oxide particles on Thermally Oxidized Porous Silicon. The fluorescence intensities were compared by binding the toxin aptamers on Thermally Oxidized Porous Silicon and Thermally Oxidized Porous Silicon/Zinc Oxide substrates, respectively. The reasons for the enhanced fluorescence properties were explored. The toxin to be tested had a stronger fluorescence signal on theThermally Oxidized Porous Silicon/Zinc Oxide substrate, which was favorable for improving the detection sensitivity.

materials science, multidisciplinary
IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

CHEN HUA-JIE,ZHANG FU-LONG,FAN HONG-LEI,CHEN XI-YING,HUANG DA-MING,YU MING-REN,HOU XIAO-YUAN,LI GU-BO

DOI: https://doi.org/10.7498/aps.45.297

IF: 0.906

1996-01-01

Acta Physica Sinica

Abstract:The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.
Study on Thermal Oxidation of Si Nanowires

JL Liu,Y Lu,Y Shi,SL Gu,RL Jiang,F Wang,HM Bu,YD Zheng

DOI: https://doi.org/10.1002/(sici)1521-396x(199808)168:2<441::aid-pssa441>3.0.co;2-v

1998-01-01

Abstract:In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1-xGex/Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 degrees C wet oxidation will keep the same shape as the initial unoxidized samples, and all the SiO2 boundaries of oxidized samples will arrive at a circular shape. These results, which should be due to stress effects, provide useful information for understanding the behavior of non-planar oxidation that is used in modern Si nanoelectronic technology.
Stable Photoluminescence in Low-Temperature Annealed Porous Silicon

DL Zhu,QW Chen,YH Zhang

DOI: https://doi.org/10.1142/s0217984901002920

2001-01-01

Modern Physics Letters B

Abstract:The low-temperature annealing of porous silicon (PS) has been studied in ambient air and vacuum. After air-annealed samples were again stored in air for a period of time, their luminescence exhibited improved stability in comparison to fresh samples. But their luminescence intensity is much weaker than that of fresh samples, and their peak position moves to shorter wavelengths. A stoichiometric oxide SiO2 can easily be formed on PS surfaces if the annealing is performed in vacuum. The SiO2 layer prevents nc-Si from further oxidation and guarantees the luminescence intensity and that peak position remains unchanged with air storage.
Tuning the photoluminescence of porous silicon nanowires by morphology control

lu gan,luwei sun,haiping he,zhizhen ye

DOI: https://doi.org/10.1039/c3tc32354d

IF: 6.4

2014-01-01

Journal of Materials Chemistry C

Abstract:A systematic study was carried out to investigate the morphology and photoluminescence (PL) of porous silicon nanowire (Si NW) arrays fabricated by metal-assisted chemical etching with diverse etching conditions and starting Si wafers. The morphology of the Si NWs, including the orientation and porosity, could be well controlled. For Si NWs prepared from p-Si-(111) wafers, the orientation switched from the < 100 > to the < 111 > direction as the hydrogen peroxide (H2O2) concentration was increased. In addition, the NW porosity could be adjusted by changing the H2O2 concentration and the substrate doping elements. The PL intensity of the NWs correlated directly with their porosity. The PL intensity was strongly dependent on the oxidizer concentration, substrate orientation, and doping element of the starting Si wafer. The maximum PL enhancement ratio reached 14.5 when the concentration of H2O2 was doubled. The photoluminescence of p-Si-(100) was 1.15, 1.39 and 1.45 times stronger than that of p-Si-(111) with 0.25, 0.5, and 0.75 M H2O2, respectively. The morphology-controllable fabrication and tunable optical properties of such porous Si NWs will promote research on the application of semiconductor optical nanodevices.
Passivation of Porous Silicon by Wet Thermal Oxidation

HJ Chen,XY Hou,GB Li,FL Zhang,MR Yu,X Wang

DOI: https://doi.org/10.1063/1.361226

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2), SiH2(O2) bonds may be responsible to the stabilization of luminescence under the laser illumination.
Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Hao Shen,Yuhan Gao,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/oe.391094

IF: 3.8

2020-01-01

Optics Express

Abstract:In this study, we have developed a reduced Er-Er interaction strategy for pursuing long lifetime and high efficiency luminescence in Er compounds with higher Er concentration. Annealing temperature and atmosphere dependence of the optical properties from Er silicate nanowires embedded in silicon oxide films have been investigated. The record long lifetime α-Er2Si2O7 of 844 µs is achieved through simultaneously reducing defect density and Er-Er interaction. The low-defect density in the α-Er2Si2O7 nanowires is mainly attributed to following aspects: no hydroxyl groups contamination, effective surface passivation and saturation of oxygen vacancies. The interaction of Er-Er ions is confined by the alteration of phonon density of states effects in the α-Er2Si2O7 nanowires. More signiﬁcantly, the up-conversion emissions in the α-Er2Si2O7 nanowires also reduce effectively because of the nanoconfinement effect.
Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

GB Li,LS Liao,XB Liu,XY Hou,X Wang

DOI: https://doi.org/10.1063/1.118552

IF: 4

1997-01-01

Applied Physics Letters

Abstract:Porous silicon treated by amine immersion and then rapid thermal oxidation results in a photoluminescence peak shift from ∼650 nm (red light) to a stable and intense ∼520 nm blue-green light. The amine immersion may catalyze a process during rapid thermal oxidation that both reduces the sizes of Si cores and more effectively saturates the dangling bonds on the inner surfaces of the porous silicon.
Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Haiping He,Chao Liu,Luwei Sun,Zhizhen Ye

DOI: https://doi.org/10.1063/1.3643047

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Luminescent porous silicon nanowire arrays are prepared through metal-assisted chemical etching. Photoluminescence (PL) and cathodoluminescence (CL) reveal that both the nanowire arrays and individual nanowire exhibit intense orange emission around 1.9 eV at room temperature. The emission linewidth increases monotonously and significantly with decreasing temperature. Combined with PL decay measurements, the results indicate that there are two transitions contributing to the broad emission at low temperatures. In addition, negative thermal quenching of the PL intensity due to surface states is observed. A multi-level transition model is proposed to interpret the experimental results.
Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1142/s0217984907014401

2007-01-01

Modern Physics Letters B

Abstract:We presented fluorescence spectra and cathode-luminescence spectra of as-prepared porous silicon under different preparation conditions. The luminescence of porous silicon may be related to the luminescent centers on porous silicon surface. The luminescent efficiency depended on the porosity of porous silicon, which further depended on the oxidative level of porous silicon with metal assistance. Under back illumination, the higher the oxidative degree of the metal is, the higher is the porosity and the luminescent efficiency of porous silicon. But under front illumination, the results exhibited an opposite tendency, which can be explained by the formation theory of PS.
Raman Investigation of Oxidation Mechanism of Silicon Nanowires

L. Z. Liu,X. L. Wu,Z. Y. Zhang,T. H. Li,Paul K. Chu

DOI: https://doi.org/10.1063/1.3224183

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Raman spectra are acquired from Si nanowires (NWs) with diameters of 2–15 nm oxidized for different time durations. The Si TO optical phonon peak downshifts asymmetrically finally becoming an amorphous Si peak after a long oxidation time. The spectral changes cannot be correlated using the phonon confinement model of cylindrical NWs. Microstructural observations disclose that the strain induced by oxidization breaks the NWs into small nanocrystals. By considering the morphological transformation, we adopt the phonon confinement models on wires and dots to explain very well the Raman spectra acquired from Si NWs with different diameters.
Effective Passivation on Si Nanocrystal Surface by Peroxide

Y. C. Cheng,W. C. Zhang,X. L. Wu,T. Qiu,G. S. Huang,G. G. Siu,Paul K. Chu

DOI: https://doi.org/10.1016/j.jcrysgro.2007.02.005

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:Using ultrasonic vibration of as-made porous silicon in water, the suspension of Si nanocrystals is prepared for exploring light-emitting properties of Si nanocrystals. By analyzing the photoluminescence (PL) property of the as-made suspension, we conclude that the observed red PL band arises from radiative recombination of carriers in the interface layer full of Si-H-x (x = 1, 2) and Si=O bonds. To effectively passivate the Si nanocrystal surface, we mixed the suspension with peroxide and then heated it. Spectral examinations show that the PL and PL excitation spectra all shift under different excitation wavelengths and at different monitoring wavelengths, respectively. This result illuminates clear evidence for the quantum confine effect of the Si nanocrystals. We suggest that the surfaces of the Si nanocrystals are covered by SiO2 after treated by peroxide, which leads to the currently observed blue PL phenomenon. (C) 2007 Elsevier B.V. All rights reserved.
Quantum-Confined and Tunable Optical Emission from Sub-10-Nm Silicon Oxide Nanowires in Aqueous Suspension

Z. Y. Zhang,X. L. Wu,J. C. Shen,L. L. Xu,Paul K. Chu

DOI: https://doi.org/10.1063/1.2806228

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Silicon oxide nanowires (SiONWs) smaller than 10 nm were synthesized by vaporization of SiO2 powders without catalytic assistance. The SiONWs resemble bamboos and the knots comprise Si nanocrystals of different orientations. A SiONW water suspension prepared ultrasonically was subjected to photoluminescence and photoluminescence excitation spectral examinations. Strong blue emission which arises from band-to-band recombination in the quantum confined Si nanocrystals in the knots is observed. Our results show that the emission characteristics can be tuned by adjusting the size of the knots.
Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Linhan Lin,Siping Guo,Xianzhong Sun,Jiayou Feng,Yan Wang

DOI: https://doi.org/10.1007/s11671-010-9719-6

2010-01-01

Nanoscale Research Letters

Abstract:Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like porous silicon (PS), these porous nanowires also show excellent photoluminescence (PL) properties. The PL intensity increases with porosity, with an enhancement of about 100 times observed in our condition experiments. A “red-shift” of the PL peak is also found. Further studies prove that the PL spectrum should be decomposed into two elementary PL bands. The peak at 850 nm is the emission of the localized excitation in the nanoporous structure, while the 750-nm peak should be attributed to the surface-oxidized nanostructure. It could be confirmed from the Fourier transform infrared spectroscopy analyses. These porous SiNW arrays may be useful as the nanoscale optoelectronic devices.
The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Li Jingjian,Diao Peng,Cai Shengmin,Hou Yongtian,Wang Xin,Zhang Shulin

DOI: https://doi.org/10.3866/PKU.WHXB19940814

1994-01-01

Acta Physico-Chimica Sinica

Abstract:The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration. the relative amount of the Si-H-2 surface species on PS decreases even though the photoluminescence intensity increases, the result suggests that it isn't SiH2 but Si O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.
Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Yanli Li,Peipei Liang,Zhigao Hu,Shuang Guo,Hua Cai,Feiling Huang,Jian Sun,Ning Xu,Jiada Wu

DOI: https://doi.org/10.1016/j.apsusc.2014.09.123

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:The effects on the photoluminescence (PL) from Si nanocrystals embedded in a SiO2 matrix (Si-NCs/SiO2) by annealing in air have been examined, and the correlation between the PL properties and the pas sivation of luminescence-quenching defects at the Si nanocrystal/SiO2 interface has been studied. Si-NCs/SiO2 were fabricated by annealing amorphous silicon suboxide (a-SiOx) in a N-2 atmosphere at 1100 degrees C and the passivation of Si-NCs/SiO2 was performed by annealing Si-NCs/SiO2 in air at temperatures ranging from 400 to 800 degrees C for varied times. The heating of Si-NCs/SiO2 in air is very effective for passivating dangling bonds and an enhancement about 5 times in PL intensity was obtained. High-temperature passivation in air is accompanied by oxidation of Si nanocrystals. Additional N2-treatment of the passivated SiNCs/SiO2 at elevated temperatures depassivates Si-NCs/SiO2, generating new dangling bonds which can also be pas sivated in the subsequent repassivation process. The effect of pas sivation on the PL intensity is reversible, while high-temperature pas sivation results in an irreversible blue shift of PL spectra. PL decay time can be indicative of passivating or generating of dangling bonds. (C) 2014 Elsevier B.V. All rights reserved.

Tuning the Fluorescence Intensity and Stability of Porous Silicon Nanowires Via Mild Thermal Oxidation

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation.

Improving the stability of porous silicon photoluminescence by damp oxidation

Synthesis and characterization of Thermally Oxidized Porous Silicon/Zinc Oxide biochip substrates with high stability and fluorescence enhancement properties

IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

Study on Thermal Oxidation of Si Nanowires

Stable Photoluminescence in Low-Temperature Annealed Porous Silicon

Tuning the photoluminescence of porous silicon nanowires by morphology control

Passivation of Porous Silicon by Wet Thermal Oxidation

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Raman Investigation of Oxidation Mechanism of Silicon Nanowires

Effective Passivation on Si Nanocrystal Surface by Peroxide

Quantum-Confined and Tunable Optical Emission from Sub-10-Nm Silicon Oxide Nanowires in Aqueous Suspension

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air