Abstract:Using Fe as catalyser, Si nanowires (SiNWs) with diameters of 5–15nm and lengths of ∼μm were synthesized via vapor–liquid–solid growth method at high temperature. The as-prepared SiNWs with the Raman peak positions of ⩽511cm−1 show a strong photoluminescence (PL) peak centered at 745nm. The position of the PL peak exhibits no dependence on the SiNW diameters, but its intensity increases with decreasing the SiNW diameters. When the as-prepared SiNWs were gradually oxidized, the 745nm PL peak reduces its intensity and meantime a new PL peak appears at 620nm. When the SiNWs were completely oxidized, the 745nm PL vanishes and the 620nm PL peak reaches its maximal intensity. Spectral analyses and microstructural observations suggest that the 745nm PL arises from optical transition in the interfacial defect states between the SiNW core and the surface Si oxide, whereas the photogeneration of carriers takes place in the quantum confined SiNW core. Based on the electron paramagnetic resonance result, we correlate the 620nm PL with the nonbridging oxygen hole centers at the surfaces of the SiNWs.

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