Synthesis, Growth Mechanism, and Light-Emission Properties of Twisted Sio2 Nanobelts and Nanosprings

Z. Y. Zhang,X. L. Wu,L. L. Xu,J. C. Shen,G. G. Siu,Paul K. Chu

DOI: https://doi.org/10.1063/1.2993164

2008-01-01

Abstract:Amorphous twisted SiO2 nanobelts have been synthesized on Si wafers using facile thermal evaporation. These nanobelts are produced together with SiO2 nanowires and a small quantity of SiO2 nanosprings. Spectral and microstructural analyses suggest that the twisted SiO2 nanobelts and nanosprings form via a polar surface driven process. Spontaneous polarization on the very thin polar crystalline SiO2 layers on the amorphous SiO2 nanobelt and nanospring surfaces makes the nuclei rearrange orderly and causes the nanobelt and nanowire to roll up at a certain twisty angle. The cathodoluminescence spectrum acquired from these SiO2 nanostructures reveals three emission bands at 4.4, 3.7, and 2.7eV originating from oxygen-related defect centers. The polar surface driven mechanism can adequately explain the growth of these novel twisty nanobelts and nanosprings which have potential applications in sensors, transducers, resonators, and photonics.