Abstract:The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for Pmos Source/Drain Contact

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Ti and NiPt/Ti Liner Silicide Contacts for Advanced Technologies

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Investigation of Ni(Pt)/Si-cap/SiGe Solid Phase Reaction

Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Pt interlayer effects on Ni germanosilicide formation and contact properties

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

Kinetics and Morphology of Ni1-xPtx-silicide Epitaxy on Si(001)

Impact of Various Silicide Techniques on SiGe Source–drain Series Resistance and Mobility of Pmosfets

Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

Dual Silicide SOI CMOS Integration with Low-Resistance PtSi PMOS Contacts

Ramp Rate Dependence of NiSi Formation Studied by Silicided Schottky Contact

Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology

The Influence of Silicide Technique on the Device Performance for Deep Sub-Micro Pmosfets

Ultrathin Ni1-Xptx Films As Electrical Contact in Cmos Devices

Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact

Low Specific Contact Resistivity of 10−3ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate