Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Joule Heating Effect on Field-Free Magnetization Switching by Spin-Orbit Torque in Exchange-Biased Systems

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Magnetization Switching by Combining Electric Field and Spin-Transfer Torque Effects in a Perpendicular Magnetic Tunnel Junction.

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient.

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Strain-mediated spin-orbit torque switching for magnetic memory

Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

High efficient field-free magnetization switching via exchange bias effect induced by antiferromagnetic insulator interface

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages