Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

Effects of 14 MeV Neutron Irradiation on the DC Characteristics of CBRAM Cells

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Heavy-Ion-Induced Displacement Damage Effects on WO x ECRAM

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Total Ionizing Dose and Synergistic Effect of Magnetoresistive Random Access Memory

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Neutron-induced effects on a self-refresh DRAM

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

Single Event Effects in Commercial FRAM and Mitigation Technique Using Neutron-Induced Displacement Damage

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Experimental study on radiation effects in floating gate read-only-memories and static random access memories

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Ionization and Displacement Damage on Nanostructure of Spin–Orbit Torque Magnetic Tunnel Junction

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Highly Stable Radiation-Hardened Resistive-Switching Memory

Mechanism of Radiation Effects in Floating Gate Roms

A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM

A Novel Single Event Upset Hardened Cmos Sram Cell